Strain and Composition of Ultrasmall Ge Quantum Dots Studied by X-ray Scattering and in situ Surface X-ray Absorption Spectroscopy (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Strain and Composition of Ultrasmall Ge Quantum Dots Studied by X-ray Scattering and in situ Surface X-ray Absorption Spectroscopy (Articolo in rivista) (literal)

Anno

• 2006-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.2181277 (literal)

Alternative label

• Dujardin R., Poydenot V., Schülli T. U., Renaud G., Ulrich O., Barski A., Derivaz M., Colonna S., Metzger T. (2006)
  Strain and Composition of Ultrasmall Ge Quantum Dots Studied by X-ray Scattering and in situ Surface X-ray Absorption Spectroscopy
  in Journal of applied physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Dujardin R., Poydenot V., Schülli T. U., Renaud G., Ulrich O., Barski A., Derivaz M., Colonna S., Metzger T. (literal)

Pagina inizio

• 063510 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 99 (literal)

Rivista

• Journal of applied physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 6 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• DRFMC-SP2M, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France; DRFMC-SP2M, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France; DRFMC-SP2M, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France; DRFMC-SP2M, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France; DRFMC-SP2M, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France; DRFMC-SP2M, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France; LPSE Université de Haute Alsace, 4 rue des Frères Lumière 68093 Mulhouse, France; ISM, CNR, Via del Fosso del Cavaliere, 100 i-00133 Roma, Italy; ESRF, BP 220, 38043 Grenoble Cedex, France; (literal)

Titolo

• Strain and Composition of Ultrasmall Ge Quantum Dots Studied by X-ray Scattering and in situ Surface X-ray Absorption Spectroscopy (literal)

Abstract

• Investigations of the structural properties of ultrasmall Ge dots, grown through a thin silicon oxide layer on Si(001), have been performed by combining (i) grazing incidence x-ray diffraction, (ii) grazing incidence small angle x-ray scattering (GISAXS), and (iii) surface extended x-ray absorption fine structure (SEXAFS). Grazing incidence x-ray diffraction observations show that the dots are highly strained to the Si(001) substrate. The dot shape and composition, as determined by GISAXS experiments and in situ SEXAFS, strongly depend on the thickness and the composition of the silicon oxide layer covering the surface of the silicon substrate. Ge dots grown through 1.2 nm thick SiO2 are round shaped with a Ge content of about 60% whereas dots grown through 0.3 nm thick SiOx are facetted and composed of almost pure Ge. (literal)

Prodotto di

• Institute of structure of matter (ISM) (Istituto)
• Microscopia a Scansione a Sonda Locale su sistemi nanostrutturati e materiali biologici (MD.P06.006.001) (Modulo)

Autore CNR

• STEFANO COLONNA (Unità di personale interno)

Incoming links:

Autore CNR di

• STEFANO COLONNA (Unità di personale interno)

Prodotto

• Institute of structure of matter (ISM) (Istituto)
• Microscopia a Scansione a Sonda Locale su sistemi nanostrutturati e materiali biologici (MD.P06.006.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)