Effects of n-type doping on active Fe sites in ion implanted Fe in InP (Articolo in rivista)

Type
Label
  • Effects of n-type doping on active Fe sites in ion implanted Fe in InP (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.2216106? (literal)
Alternative label
  • Amore Bonapasta A., Filippone F., Gasparotto A., Cesca T. (2006)
    Effects of n-type doping on active Fe sites in ion implanted Fe in InP
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Amore Bonapasta A., Filippone F., Gasparotto A., Cesca T. (literal)
Pagina inizio
  • 251912 (literal)
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  • 88 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • http://dx.doi.org/10.1063/1.2216106 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Istituto di Struttura della Materia (ISM)—Consiglio Nazionale delle Ricerche, Via Salaria Km 29.5, CP 10, 00016 Monterotondo Stazione, Italy Department of Physics, University of Padova, Via Marzolo 8, I-35131, Padova, Italy (literal)
Titolo
  • Effects of n-type doping on active Fe sites in ion implanted Fe in InP (literal)
Abstract
  • An n-type doping significantly increases the number of active Fe atoms substituting In (FeIn) in Fe-implanted InP. We address the origin of this doping effect by investigating the relative stability of neutral and charged FeIn states with first-principles theoretical methods. The present results show that donor-acceptor pairs have direct stabilizing effects on FeIn related to charge rearrangements strongly localized at the Fe site and involving d orbitals. The resulting microscopic description of the doping effects accounts for the experimental findings and provides a significant guideline for tuning electronic and optical properties of Fe implanted InP and InP-based compounds. (literal)
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