Scanning tunneling microscopy observation of a mott-insulator phase at the 1T-TaSe2 surface (Articolo in rivista)

Type
Label
  • Scanning tunneling microscopy observation of a mott-insulator phase at the 1T-TaSe2 surface (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Alternative label
  • Colonna S., Ronci F., Cricenti A., Perfetti L., Berger H., Grioni M. (2006)
    Scanning tunneling microscopy observation of a mott-insulator phase at the 1T-TaSe2 surface
    in Japanese journal of applied physics (Online)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Colonna S., Ronci F., Cricenti A., Perfetti L., Berger H., Grioni M. (literal)
Pagina inizio
  • 1950 (literal)
Pagina fine
  • 1952 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 45 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR - ISM Department of Physics and Astronomy, Vanderbilt University, Nashville, USA Institut de Physique des Nanostructures, Ecole Polytechnique Fédérale de Lausanne, Switzerland Institut de Physique de la Matiere Complexe, Ecole Polytechnique Fédérale de Lausanne, Switzerland (literal)
Titolo
  • Scanning tunneling microscopy observation of a mott-insulator phase at the 1T-TaSe2 surface (literal)
Abstract
  • We present scanning tunneling microscopy (STM) measurements at the TaSe2 surface showing a first order process leading to a surface Mott transition. This metal to insulator transition is triggered by the commensurate charge density wave (CDW) which set up at 475 K. The electronic structure rearrangement due to the new periodicity gives rise to a half filled sub-band prone to the localization phenomena. This transition results fully developed below 250 K in agreement with previous photoemission measurements. (literal)
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