Mott phase at the surface of 1T-TaSe2 observed by Scanning Tunneling Microscopy (Articolo in rivista)

Type
Label
  • Mott phase at the surface of 1T-TaSe2 observed by Scanning Tunneling Microscopy (Articolo in rivista) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevLett.94.036405 (literal)
Alternative label
  • Colonna S., Ronci F., Cricenti A., Perfetti L., Berger H., Grioni M. (2005)
    Mott phase at the surface of 1T-TaSe2 observed by Scanning Tunneling Microscopy
    in Physical review letters (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Colonna S., Ronci F., Cricenti A., Perfetti L., Berger H., Grioni M. (literal)
Pagina inizio
  • 036405 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 94 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR Istituto di Struttura della Materia; CNR Istituto di Struttura della Materia; CNR Istituto di Struttura della Materia e Department of Physics and Astronomy, Vanderbilt University, Nashville; Institut de Physique des Nanostructures, Ecole Polytechnique Fédérale de Lausanne; Institut de Physique de la Matiere Complexe, Ecole Polytechnique Federale de Lausanne; Institut de Physique des Nanostructures, Ecole Polytechnique Fédérale de Lausanne (literal)
Titolo
  • Mott phase at the surface of 1T-TaSe2 observed by Scanning Tunneling Microscopy (literal)
Abstract
  • In this Letter we report the observation, by scanning tunneling microscopy, of a Mott metal to insulator transition at the surface of 1T-TaSe2. Our spectroscopic data compare considerably well with previous angle-resolved photoemission spectroscopy measurements and confirm the presence of a large hysteresis related to a first order process. The local character of the tunneling spectroscopy technique allows a direct visualization of the surface symmetry and provides spectroscopic measurements on the defect-free region of the sample. It follows that the electronic localization is driven purely by the enhancement of the charge density wave amplitude which drives a bandwidth controlled metal-insulator transition. (literal)
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