http://www.cnr.it/ontology/cnr/individuo/prodotto/ID52051
Mott phase at the surface of 1T-TaSe2 observed by Scanning Tunneling Microscopy (Articolo in rivista)
- Type
- Label
- Mott phase at the surface of 1T-TaSe2 observed by Scanning Tunneling Microscopy (Articolo in rivista) (literal)
- Anno
- 2005-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1103/PhysRevLett.94.036405 (literal)
- Alternative label
Colonna S., Ronci F., Cricenti A., Perfetti L., Berger H., Grioni M. (2005)
Mott phase at the surface of 1T-TaSe2 observed by Scanning Tunneling Microscopy
in Physical review letters (Print)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Colonna S., Ronci F., Cricenti A., Perfetti L., Berger H., Grioni M. (literal)
- Pagina inizio
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- CNR Istituto di Struttura della Materia;
CNR Istituto di Struttura della Materia;
CNR Istituto di Struttura della Materia e Department of Physics and Astronomy, Vanderbilt University, Nashville;
Institut de Physique des Nanostructures, Ecole Polytechnique Fédérale de Lausanne;
Institut de Physique de la Matiere Complexe, Ecole Polytechnique Federale de Lausanne;
Institut de Physique des Nanostructures, Ecole Polytechnique Fédérale de Lausanne (literal)
- Titolo
- Mott phase at the surface of 1T-TaSe2 observed by Scanning Tunneling Microscopy (literal)
- Abstract
- In this Letter we report the observation, by scanning tunneling microscopy, of a Mott metal to insulator transition at the surface of 1T-TaSe2. Our spectroscopic data compare considerably well with previous angle-resolved photoemission spectroscopy measurements and confirm the presence of a large hysteresis related to a first order process. The local character of the tunneling spectroscopy technique allows a direct visualization of the surface symmetry and provides spectroscopic measurements on the defect-free region of the sample. It follows that the electronic localization is driven purely by the enhancement of the charge density wave amplitude which drives a bandwidth controlled metal-insulator transition. (literal)
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