High-quality Cr-doped InGaAs/InP(100) MQWs grown by tert-butylarsine in a MOVPE apparatus (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• High-quality Cr-doped InGaAs/InP(100) MQWs grown by tert-butylarsine in a MOVPE apparatus (Articolo in rivista) (literal)

Anno

• 2003-01-01T00:00:00+01:00 (literal)

Alternative label

• Carta G., D'Andrea A., Fernández-Alonso F., Franco A., El Habra N., Righini M., Rossetto G., Schiumarini D., Selci S., Zanella P. (2003)
  High-quality Cr-doped InGaAs/InP(100) MQWs grown by tert-butylarsine in a MOVPE apparatus
  in Journal of crystal growth
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Carta G., D'Andrea A., Fernández-Alonso F., Franco A., El Habra N., Righini M., Rossetto G., Schiumarini D., Selci S., Zanella P. (literal)

Pagina inizio

• 149 (literal)

Pagina fine

• 152 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 248 (literal)

Rivista

• Journal of crystal growth (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR - ISC CNR - ISM (literal)

Titolo

• High-quality Cr-doped InGaAs/InP(100) MQWs grown by tert-butylarsine in a MOVPE apparatus (literal)

Abstract

• We have studied the introduction of deep levels in InGaAs/InP multi quantum wells (MQW) grown by metal organic vapour phase epitaxy (MOVPE) using tert-butylarsine (tBuAsH2) as arsenic precursor as well as chromium (bis-cyclopentadienyl chromium) and zinc (dietyl-zinc) as dopant elements able to promote recombination centres in the ternary alloy. We have utilized secondary-ion mass spectrometry to measure dopant concentrations and high-resolution X-ray diffraction (HRXRD) for structural characterization. Particularly for the chromium-doped systems, frequency- and time-resolved optical spectroscopy of the MWQ ground-state transition confirms an increase of the carrier recombination rate upon an increase of defect density, while the electronic and structural properties of the sample are largely preserved. (literal)

Prodotto di

• Institute of structure of matter (ISM) (Istituto)

Autore CNR

• MARCOFABIO RIGHINI (Persona)
• STEFANO SELCI (Persona)

Incoming links:

Autore CNR di

• STEFANO SELCI (Persona)
• MARCOFABIO RIGHINI (Persona)

Prodotto

• Institute of structure of matter (ISM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of crystal growth (Rivista)