InxGa(1-x)As quantum dots grown on GaAs studied by EXAFS in total reflection mode (ReflEXAFS) (Articolo in rivista)

Type
Label
  • InxGa(1-x)As quantum dots grown on GaAs studied by EXAFS in total reflection mode (ReflEXAFS) (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Alternative label
  • d'Acapito F., Colonna S., Arciprete F., Balzarotti A., Davoli I., Patella F., Mobilio S. (2003)
    InxGa(1-x)As quantum dots grown on GaAs studied by EXAFS in total reflection mode (ReflEXAFS)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • d'Acapito F., Colonna S., Arciprete F., Balzarotti A., Davoli I., Patella F., Mobilio S. (literal)
Pagina inizio
  • 85 (literal)
Pagina fine
  • 89 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 200 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Titolo
  • InxGa(1-x)As quantum dots grown on GaAs studied by EXAFS in total reflection mode (ReflEXAFS) (literal)
Abstract
  • We show how extended X-ray absorption fine structure in total reflection geometry (ReflEXAFS) can be effective in determining the structure of InxGa(1-x)As dots grown on GaAs. In particular, by comparing theoretical models to experimental data on first shell bond lengths, it is possible to recognize the strained or relaxed state of the dots as well as their composition. (literal)
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