Electronic evidence of asymmetry in the Si(111)sqrt3xsqrt3-Ag structure (Articolo in rivista)

Type
Label
  • Electronic evidence of asymmetry in the Si(111)sqrt3xsqrt3-Ag structure (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Alternative label
  • Matsuda I., Morikawa H., Liu C., Ohuchi S., Hasegawa S., Okuda T., Kinoshita T., Ottaviani C., Cricenti A., D'angelo M., Soukiassian P., Le Lay G. (2003)
    Electronic evidence of asymmetry in the Si(111)sqrt3xsqrt3-Ag structure
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Matsuda I., Morikawa H., Liu C., Ohuchi S., Hasegawa S., Okuda T., Kinoshita T., Ottaviani C., Cricenti A., D'angelo M., Soukiassian P., Le Lay G. (literal)
Pagina inizio
  • 085407 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 68 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Titolo
  • Electronic evidence of asymmetry in the Si(111)sqrt3xsqrt3-Ag structure (literal)
Abstract
  • Our photoemission spectroscopy results clearly demonstrate that symmetry breakdown in atomic arrangement brings about a lift of degeneracy in electronic states, leading to settle a long-standing controversy on a surface superstructure. We provide unambiguous evidences that Si(111)sqrt3xsqrt3-Ag has the inequivalent triangle structure (IET), excluding a long-lived honeycomb-chained triangle model. We also give critical experimental proof that the surface exhibits a disorder-order phase transition by cooling; the thermally fluctuating IET structure is frozen. (literal)
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