Lattice relaxation by atomic hydrogen irradiation of InGaAsN/GaAs semiconductor alloys (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Lattice relaxation by atomic hydrogen irradiation of InGaAsN/GaAs semiconductor alloys (Articolo in rivista) (literal)

Anno

• 2003-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1103/PhysRevB.68.085204 (literal)

Alternative label

• Polimeni A., Ciatto G., Ortega L., Jiang F., Boscherini F., Filippone F., Amore Bonapasta A., Stavola M., Capizzi M. (2003)
  Lattice relaxation by atomic hydrogen irradiation of InGaAsN/GaAs semiconductor alloys
  in Physical review. B, Condensed matter and materials physics (Online)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Polimeni A., Ciatto G., Ortega L., Jiang F., Boscherini F., Filippone F., Amore Bonapasta A., Stavola M., Capizzi M. (literal)

Pagina inizio

• 085204 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 68 (literal)

Rivista

• Physical review. B, Condensed matter and materials physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 5 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• ISM - CNR Università di Roma \"La Sapienza\" (literal)

Titolo

• Lattice relaxation by atomic hydrogen irradiation of InGaAsN/GaAs semiconductor alloys (literal)

Abstract

• We study the effect of hydrogen incorporation on the lattice properties of InxGa1–xAs1–yNy/GaAs heterostructures. The band gap widening observed in the photoluminescence spectra of hydrogenated GaAs1–yNy and InxGa1–xAs1–yNy is accompanied by a lattice expansion along the growth direction, as measured by x-ray diffraction. At the same time, far-infrared spectroscopy reveals that a Ga-N local vibrational mode at ~472 cm–1 disappears upon hydrogen irradiation. All these effects are reversed upon hydrogen removal from the hydrogenated samples by thermal annealing. Finally, first-principles calculations indicate that a same di-hydrogen complex is responsible for both the band gap reopening and the lattice expansion of hydrogenated InxGa1–xAs1–yNy. (literal)

Prodotto di

• Institute of structure of matter (ISM) (Istituto)

Autore CNR

• ALDO AMORE BONAPASTA (Unità di personale interno)
• FRANCESCO FILIPPONE (Persona)

Incoming links:

Autore CNR di

• ALDO AMORE BONAPASTA (Unità di personale interno)
• FRANCESCO FILIPPONE (Persona)

Prodotto

• Institute of structure of matter (ISM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Physical review. B, Condensed matter and materials physics (Rivista)