http://www.cnr.it/ontology/cnr/individuo/prodotto/ID51927
High-quality InGaAs/InPinterfaces by the use of tertiary-butylarsine in MOVPE multi-quantum wells (Articolo in rivista)
- Type
- Label
- High-quality InGaAs/InPinterfaces by the use of tertiary-butylarsine in MOVPE multi-quantum wells (Articolo in rivista) (literal)
- Anno
- 2002-01-01T00:00:00+01:00 (literal)
- Alternative label
Carta G., D'Andrea A., Fernandez-Alonso F., El Habra N., Righini M., Rossetto G., Schiumarini D., Selci S., Zanella P. (2002)
High-quality InGaAs/InPinterfaces by the use of tertiary-butylarsine in MOVPE multi-quantum wells
in Journal of crystal growth
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Carta G., D'Andrea A., Fernandez-Alonso F., El Habra N., Righini M., Rossetto G., Schiumarini D., Selci S., Zanella P. (literal)
- Pagina inizio
- Pagina fine
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- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Titolo
- High-quality InGaAs/InPinterfaces by the use of tertiary-butylarsine in MOVPE multi-quantum wells (literal)
- Abstract
- Tert-butylarsine, a less toxic and dangerous compound than arsine (AsH3),
is investigated as a precursor for metalorganic vapor phase epitaxy. We
have performed a comparative study on two InGaAs/InP multi-quantum well
samples sharing a nominally identical structure and composition but grown
with these two different arsenic sources. X-ray diffraction and optical
spectroscopy (reflectivity and photoluminescence) show high material
quality for both sets of samples. In particular, the use of tert-
butylarsine promotes flatter interfaces characterized by a compositional
grading of a few monolayers. (literal)
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