High-quality InGaAs/InPinterfaces by the use of tertiary-butylarsine in MOVPE multi-quantum wells (Articolo in rivista)

Type
Label
  • High-quality InGaAs/InPinterfaces by the use of tertiary-butylarsine in MOVPE multi-quantum wells (Articolo in rivista) (literal)
Anno
  • 2002-01-01T00:00:00+01:00 (literal)
Alternative label
  • Carta G., D'Andrea A., Fernandez-Alonso F., El Habra N., Righini M., Rossetto G., Schiumarini D., Selci S., Zanella P. (2002)
    High-quality InGaAs/InPinterfaces by the use of tertiary-butylarsine in MOVPE multi-quantum wells
    in Journal of crystal growth
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Carta G., D'Andrea A., Fernandez-Alonso F., El Habra N., Righini M., Rossetto G., Schiumarini D., Selci S., Zanella P. (literal)
Pagina inizio
  • 243 (literal)
Pagina fine
  • 248 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 244 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Titolo
  • High-quality InGaAs/InPinterfaces by the use of tertiary-butylarsine in MOVPE multi-quantum wells (literal)
Abstract
  • Tert-butylarsine, a less toxic and dangerous compound than arsine (AsH3), is investigated as a precursor for metalorganic vapor phase epitaxy. We have performed a comparative study on two InGaAs/InP multi-quantum well samples sharing a nominally identical structure and composition but grown with these two different arsenic sources. X-ray diffraction and optical spectroscopy (reflectivity and photoluminescence) show high material quality for both sets of samples. In particular, the use of tert- butylarsine promotes flatter interfaces characterized by a compositional grading of a few monolayers. (literal)
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