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Hole-transport properties of a low-band gap alternating polyfluorene (Articolo in rivista)
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- Hole-transport properties of a low-band gap alternating polyfluorene (Articolo in rivista) (literal)
- Anno
- 2010-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1063/1.3466769 (literal)
- Alternative label
Debebe, SE (Debebe, Siraye E.); Mammo, W (Mammo, Wendimagegn); Yohannes, T (Yohannes, Teketel); Tinti, F (Tinti, Francesca); Martelli, A (Martelli, Alessandro); Camaioni, N (Camaioni, Nadia) (2010)
Hole-transport properties of a low-band gap alternating polyfluorene
in Journal of applied physics; AIP, American institute of physics, Melville, NY (Stati Uniti d'America)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Debebe, SE (Debebe, Siraye E.); Mammo, W (Mammo, Wendimagegn); Yohannes, T (Yohannes, Teketel); Tinti, F (Tinti, Francesca); Martelli, A (Martelli, Alessandro); Camaioni, N (Camaioni, Nadia) (literal)
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- DOI: 10.1063/1.3466769 (literal)
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- [Debebe, Siraye E.; Mammo, Wendimagegn; Yohannes, Teketel] Univ Addis Ababa, Dept Chem, Addis Ababa, Ethiopia; [Tinti, Francesca; Martelli, Alessandro; Camaioni, Nadia] CNR, Ist Sintesi Organ & Fotoreattivita, I-40129 Bologna, Italy (literal)
- Titolo
- Hole-transport properties of a low-band gap alternating polyfluorene (literal)
- Abstract
- The bulk transport properties of positive carriers in thin films of a low band-gap conjugated polymer, called APFO-Green5, have been investigated in the ac regime. The frequency-dependent impedance of an ITO/PEDOT:PSS/APFO-Green5/Al structure (where ITO is indium tin oxide and PEDOT:PSS is poly(3,4-ethylenedioxythiophene)/polystyrene sulphonic acid) was measured as a function of the dc applied bias. The capacitance response at low frequency gave indication of a combination of trapping and double-injection effects, while in the intermediate-high frequency range was determined by the transit time of injected holes. Hole mobility in APFO-Green5 thin films exhibited a Frenkel-like dependence on the applied electric field, with a field-dependent coefficient of around 8 x 10(-3) (V cm(-1))(-1/2). A hole mobility close to 2 x 10(-5) cm(2) V-1 s(-1) was achieved at the field of 3.5 x 10(5) V cm(-1), in excellent agreement with that already reported by using a different bulk investigation technique. (literal)
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