Optical and electrical anisotropy of ordered layers of rigid core semiconductor - dithienothiophene derivative (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Optical and electrical anisotropy of ordered layers of rigid core semiconductor - dithienothiophene derivative (Articolo in rivista) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Alternative label

• Marszalek, T (Marszalek, T.); Dobruchowska, E (Dobruchowska, E.); Jung, J (Jung, J.); Ulanski, J (Ulanski, J.); Melucci, M (Melucci, M.); Barbarella, G (Barbarella, G.) (2010)
  Optical and electrical anisotropy of ordered layers of rigid core semiconductor - dithienothiophene derivative
  
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Marszalek, T (Marszalek, T.); Dobruchowska, E (Dobruchowska, E.); Jung, J (Jung, J.); Ulanski, J (Ulanski, J.); Melucci, M (Melucci, M.); Barbarella, G (Barbarella, G.) (literal)

Pagina inizio

• - (literal)

Pagina fine

• - (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 51 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note

• DOI: 10.1051/epjap/2010107 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• [Marszalek, T.; Dobruchowska, E.; Jung, J.; Ulanski, J.] Tech Univ Lodz, Dept Mol Phys, PL-90924 Lodz, Poland; [Melucci, M.; Barbarella, G.] CNR, ISOF, I-40129 Bologna, Italy (literal)

Titolo

• Optical and electrical anisotropy of ordered layers of rigid core semiconductor - dithienothiophene derivative (literal)

Abstract

• Preparation of highly oriented layers of organic semiconductor - dithienothiophene derivative is described. The layers were obtained by zone-casting technique - a solution based one step method that does not require the use of preoriented substrates. Unidirectional alignment of the dithienothiophene derivative molecules in the zone-cast layers was confirmed by absorption and photoluminescence polarized spectra. Anisotropy of electrical properties was characterised by means of anisotropy of charge carrier mobility in field effect transistors (FETs). The FET devices were fabricated in bottom contacts - bottom gate configuration with the channel lengths parallel and perpendicular to the crystal growth direction, respectively. The FET mobility determined in the direction parallel to the zone-casting direction is ca. 1 order of magnitude higher than those in the perpendicular direction. (literal)

Prodotto di

• MAteriali Funzionali Organici per applicazioni High-Tech: sistemi molecolari, supramolecolari e bioibridi (MAFO-HT) (PM.P04.003.003) (Modulo)
• Institute for organic syntheses and photoreactivity (ISOF) (Istituto)

Autore CNR

• MANUELA MELUCCI (Persona)
• GIOVANNA BARBARELLA (Unità di personale interno)

Incoming links:

Prodotto

• Institute for organic syntheses and photoreactivity (ISOF) (Istituto)
• MAteriali Funzionali Organici per applicazioni High-Tech: sistemi molecolari, supramolecolari e bioibridi (MAFO-HT) (PM.P04.003.003) (Modulo)

Autore CNR di

• GIOVANNA BARBARELLA (Unità di personale interno)
• MANUELA MELUCCI (Persona)