Morphological and Electrical Characterization of Etched Si Wafers (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Morphological and Electrical Characterization of Etched Si Wafers (Articolo in rivista) (literal)

Anno

• 2004-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1149/1.1774188 (literal)

Alternative label

• Palermo, V.; Susi, E.; Jones, D. (2004)
  Morphological and Electrical Characterization of Etched Si Wafers
  in Journal of the Electrochemical Society
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Palermo, V.; Susi, E.; Jones, D. (literal)

Pagina inizio

• G554 (literal)

Pagina fine

• G558 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JESOAN00015100000900G554000001&idtype=cvips&prog=normal (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 151 (literal)

Rivista

• Journal of the Electrochemical Society (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 5 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• ISOF CNR Bologna IMM CNR Bologna (literal)

Titolo

• Morphological and Electrical Characterization of Etched Si Wafers (literal)

Abstract

• The effect of different chemical treatments on the surface morphology of p-type Si(001) surfaces was studied by atomic force microscopy and scanning tunneling microscopy. The electrical parameters of Al/Si Schottky diodes fabricated on the etched surfaces were correlated with the morphological characteristics. The surface of NH4F-treated surfaces shows pore formation and anisotropic etching. Hydrogen bubbles formed on this surface act as microscopic masks during the NH4F etching, leading to preferential etching at mask borders. Smoother, passivated areas which are not attacked are observed on the surface. The etching proceeds sometimes beneath these passivated areas, eventually yielding suspended structures. A correlation between surface roughness and electrical \"leakage spots'' is observed in the fabricated diodes. (literal)

Prodotto di

• MAteriali Funzionali Organici per applicazioni High-Tech: sistemi molecolari, supramolecolari e bioibridi (MAFO-HT) (PM.P04.003.001) (Modulo)
• Institute for organic syntheses and photoreactivity (ISOF) (Istituto)

Autore CNR

• VINCENZO PALERMO (Persona)
• ENRICHETTA SUSI (Persona)
• DEREK JONES (Unità di personale interno)

Incoming links:

Prodotto

• Institute for organic syntheses and photoreactivity (ISOF) (Istituto)
• MAteriali Funzionali Organici per applicazioni High-Tech: sistemi molecolari, supramolecolari e bioibridi (MAFO-HT) (PM.P04.003.001) (Modulo)

Autore CNR di

• VINCENZO PALERMO (Persona)
• DEREK JONES (Unità di personale interno)
• ENRICHETTA SUSI (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of the Electrochemical Society (Rivista)