Atomistic mechanism of boron diffusion in silicon (Articolo in rivista)

Type
Label
  • Atomistic mechanism of boron diffusion in silicon (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Alternative label
  • De Salvador, D; Napolitani, E; Mirabella, S; Bisognin, G; Impellizzeri, G; Carnera, A; Priolo, F (2006)
    Atomistic mechanism of boron diffusion in silicon
    in Physical review letters (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • De Salvador, D; Napolitani, E; Mirabella, S; Bisognin, G; Impellizzeri, G; Carnera, A; Priolo, F (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 97 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, INFM, MATIS, I-35131 Padua, Italy; Univ Padua, Dept Phys, I-35131 Padua, Italy; CNR, INFM, MATIS, I-95123 Padua, Italy; Univ Catania, Dept Phys & Astron, I-95123 Padua, Italy (literal)
Titolo
  • Atomistic mechanism of boron diffusion in silicon (literal)
Abstract
  • B diffuses in crystalline Si by reacting with a Si self-interstitial (I) with a frequency g and so forming a fast migrating BI complex that can migrate for an average length lambda. We experimentally demonstrate that both g and lambda strongly depend on the free hole concentration p. At low p, g has a constant trend and lambda increases with p, while at high p, g has a superlinear trend and lambda decreases with p. This demonstrates that BI forms in the two regimes by interaction with neutral and double positive I, respectively, and its charge state has to change by interaction with free holes before diffusing. (literal)
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