http://www.cnr.it/ontology/cnr/individuo/prodotto/ID508
In-plane anisotropy in the magnetic and transport properties of manganite ultrathin films (Articolo in rivista)
- Type
- Label
- In-plane anisotropy in the magnetic and transport properties of manganite ultrathin films (Articolo in rivista) (literal)
- Anno
- 2006-01-01T00:00:00+01:00 (literal)
- Alternative label
Orgiani, P; Petrov, AY; Adamo, C; Aruta, C; Barone, C; De Luca, GM; Galdi, A; Polichetti, M; Zola, D; Maritato, L (2006)
In-plane anisotropy in the magnetic and transport properties of manganite ultrathin films
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Orgiani, P; Petrov, AY; Adamo, C; Aruta, C; Barone, C; De Luca, GM; Galdi, A; Polichetti, M; Zola, D; Maritato, L (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Univ Salerno, CNR, INFM, I-84081 Baronissi, Italy; Univ Salerno, Dept Phys, I-84081 Baronissi, Italy (literal)
- Titolo
- In-plane anisotropy in the magnetic and transport properties of manganite ultrathin films (literal)
- Abstract
- To analyze the conducting and magnetic properties near the film and substrate interface in manganites, ultrathin films (thickness <= 100 A) of La0.7Sr0.3MnO3 were epitaxially grown by molecular-beam epitaxy on single-crystal (001) LaAlO3, (110) NdGaO3, and (001) SrTiO3 substrates. Structural, magnetic, and magnetoresistive properties were investigated. All samples exhibit a substrate-independent decrease of the c-lattice parameter for thinnest films. Highly anisotropic behavior in both transport and magnetic properties were measured along the in-plane directions parallel to the substrate crystallographic axes. In particular, for the thinnest films (60 A), the negative magnetoresistance at about 120 K with the average current along one of the crystallographic directions, is larger than the room-temperature colossal value. In the same low-temperature range, with the current along the other in-plane crystallographic direction, the magnetoresistance changes sign (resulting to be magnetic field independent for T similar to 150 K). Such an in-plane anisotropy of transport and magnetic properties is investigated with respect to possible intrinsic and extrinsic physical mechanisms. (literal)
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