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Novel Gallium Complexes with Malonic Diester Anions as Molecular Precursors for the MOCVD of Ga2O3 Thin Films (Articolo in rivista)

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Novel Gallium Complexes with Malonic Diester Anions as Molecular Precursors for the MOCVD of Ga2O3 Thin Films (Articolo in rivista) (literal)

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M. Hellwig, K. Xu, D. Barreca, A. Gasparotto, M. Winter, E. Tondello, R.A. Fischer, A. Devi (2009)
Novel Gallium Complexes with Malonic Diester Anions as Molecular Precursors for the MOCVD of Ga2O3 Thin Films
in European journal of inorganic chemistry (Print)
(literal)

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M. Hellwig, K. Xu, D. Barreca, A. Gasparotto, M. Winter, E. Tondello, R.A. Fischer, A. Devi (literal)

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1,2,5,7,8: Inorganic Materials Chemistry, Lehrstuhl für Anorganische Chemie II, Ruhr-Universität Bochum, 44780 Bochum, Germany 3: ISTM-CNR and INSTM - Department of Chemistry, Padova University, 35131 Padova, Italy 4,6: Department of Chemistry - Padova University and INSTM, 35131 Padova, Italy (literal)

Titolo

Novel Gallium Complexes with Malonic Diester Anions as Molecular Precursors for the MOCVD of Ga2O3 Thin Films (literal)

Abstract

Five different homoleptic gallium complexes with malonic diester anions [Ga(ROCOCHOCOR)3] [R =Me (1), Et (2), iPr (3), tBu (4) and SiMe3 (5)] have been synthesised and characterised by 1H and 13C NMR, IR spectroscopy, electron ionisation mass spectrometry (EI-MS), and single-crystal X-ray diffraction. The thermal properties of the obtained compounds were evaluated by thermogravimetric studies to assess their suitability as precursors for the metal-organic chemical vapour deposition (MOCVD) of Ga2O3 thin films. MOCVD of Ga2O3 thin films was carried out starting from compound 2 in light of the promising features of this precursor. The as-deposited layers are amorphous and can be transformed into the monoclinic ²-Ga2O3 phase upon annealing at 1000 °C ex situ. The film morphology was studied by scanning electron microscopy (SEM), and its composition was investigated by energy-dispersive X-ray spectroscopy (EDXS) and X-ray photoelectron spectroscopy (XPS). Almost stoichiometric Ga2O3 thin films with low levels of carbon incorporation were obtained. (literal)

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