CVD of nanosized ZnS and CdS thin films from single-source precursors (Articolo in rivista)

Type
Label
  • CVD of nanosized ZnS and CdS thin films from single-source precursors (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Alternative label
  • D. Barreca, A. Gasparotto, C. Maragno, E. Tondello (2004)
    CVD of nanosized ZnS and CdS thin films from single-source precursors
    in Journal of the Electrochemical Society
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • D. Barreca, A. Gasparotto, C. Maragno, E. Tondello (literal)
Pagina inizio
  • G428 (literal)
Pagina fine
  • G435 (literal)
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  • 151 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 8 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1: Istituto di Scienze e Tecnologie Molecolari del CNR, Sezione di Padova e Istituto di Scienze e Tecnologie Molecolari, 1-I-35131 Padova, Italy 2,3,4: Dipartimento di Chimica, Universita` di Padova and Istituto di Scienze e Tecnologie Molecolari, I-35131 Padova, Italy (literal)
Titolo
  • CVD of nanosized ZnS and CdS thin films from single-source precursors (literal)
Abstract
  • A Chemical Vapor Deposition (CVD) route to nanosized ZnS and CdS thin films was developed. The layers were deposited on SiO2 substrates in a N2 atmosphere at temperatures between 473 and 723 K using M(O-iPrXan)2 (M=Zn,Cd; O-iPrXan=S2COCH(CH3)2) as single-source precursors. Thermal decomposition and fragmentation of M(O-iPrXan)2 compounds were investigated by thermal analyses and mass spectrometry. The sulfide films were thoroughly characterized in their composition, nanostructure and morphology by means of several analytical techniques. Surface and in-depth chemical composition was studied by X-ray Photoelectron Spectroscopy, X-ray Excited Auger Electron Spectroscopy and Secondary Ion Mass Spectrometry. Film nanostructure and surface topography were investigated as a function of the synthesis conditions by Glancing Incidence X-Ray Diffraction and Atomic Force Microscopy, respectively. Optical absorption properties were also studied. Nanophasic and contaminant-free ZnS and CdS thin films with average crystallite size lower than 25 nm were obtained. The layers mainly contained the hexagonal (alpha) sulfide phase and displayed a smooth and regular surface morphology. In the present work, the influence of synthesis conditions on film characteristics is analyzed and discussed. (literal)
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