Electron Spin Echo Relaxation and Envelope Modulation of Phosphorus Shallow Donors in Silicon (Articolo in rivista)

Type
Label
  • Electron Spin Echo Relaxation and Envelope Modulation of Phosphorus Shallow Donors in Silicon (Articolo in rivista) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.72.235201 (literal)
Alternative label
  • Ferretti A., Fanciulli M., Ponti A., Schweiger A. (2005)
    Electron Spin Echo Relaxation and Envelope Modulation of Phosphorus Shallow Donors in Silicon
    in Physical review. B, Condensed matter and materials physics (Online)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Ferretti A., Fanciulli M., Ponti A., Schweiger A. (literal)
Pagina inizio
  • 235201 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 72 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Anna Ferretti and Marco Fanciulli* Laboratorio Nazionale MDM--CNR-INFM, via Camillo Olivetti 2, I-20041 Agrate Brianza, Italy Alessandro Ponti+ Istituto di Scienze e Tecnologie Molecolari--CNR, via Camillo Golgi 19, I-20133, Milano, Italy Arthur Schweiger Department of Chemistry and Applied Biosciences, ETH Hönggerberg, CH-8093 Zürich, Switzerland (literal)
Titolo
  • Electron Spin Echo Relaxation and Envelope Modulation of Phosphorus Shallow Donors in Silicon (literal)
Abstract
  • Spins of single donor atoms are attractive candidates for large scale quantum information processing in silicon, since quantum computation can be realized through the manipulation of electron and/or nuclear spins. In this paper we report on two-pulse electron spin-echo experiments on phosphorus shallow donors in natural and 28Si-enriched silicon epilayers doped with 1016 cm-3 P donors. The experiments address the spin-spin relaxation times and mechanisms and provide, through the electron spin-echo envelope modulation (ESEEM) effect, information on the donor electron wave function. Experiments performed as a function of the pulse turning angle allowed us to measure the exponential relaxation and spectral diffusion times depurated by instantaneous diffusion. According to these results, isotopically purified samples are necessary to reduce the spectral diffusion contribution and the P shallow donors concentration plays a fundamental role in determining the intrinsic phase memory time. ESEEM peaks have been assigned to hyperfine-coupled silicon-29 nuclei at specific crystallographic positions on the basis of a spectral fit procedure including instrumental distortions. (literal)
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