Integration of site-controlled pyramidal quantum dots and photonic crystal membrane cavities (Articolo in rivista)

Type
Label
  • Integration of site-controlled pyramidal quantum dots and photonic crystal membrane cavities (Articolo in rivista) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.2952278 (literal)
Alternative label
  • Gallo, P; Felici, M; Dwir, B; Atlasov, KA; Karlsson, KF; Rudra, A; Mohan, A; Biasiol, G; Sorba, L; Kapon, E (2008)
    Integration of site-controlled pyramidal quantum dots and photonic crystal membrane cavities
    in Applied physics letters; American Institute of Physics, Woodbury [NY] (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Gallo, P; Felici, M; Dwir, B; Atlasov, KA; Karlsson, KF; Rudra, A; Mohan, A; Biasiol, G; Sorba, L; Kapon, E (literal)
Pagina inizio
  • 263101 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://apl.aip.org/resource/1/applab/v92/i26/p263101_s1 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 92 (literal)
Rivista
Note
  • Scopus (literal)
  • ISI Web of Science (WOS) (literal)
  • Google Scholar (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • \"[Gallo, P.; Felici, M.; Dwir, B.; Atlasov, K. A.; Karlsson, K. F.; Rudra, A.; Mohan, A.; Kapon, E.] Ecole Polytech Fed Lausanne, Lab Phys Nanostruct, CH-1015 Lausanne, Switzerland; [Biasiol, G.] CNR, INFM, Lab Nazl TASC, I-34012 Trieste, Italy; [Sorba, L.] CNR, INFM, NEST, I-56126 Pisa, Italy; [Sorba, L.] Scuola Normale Super Pisa, I-56126 Pisa, Italy (literal)
Titolo
  • Integration of site-controlled pyramidal quantum dots and photonic crystal membrane cavities (literal)
Abstract
  • The authors demonstrate the deterministic coupling between a single, site-controlled InGaAs/GaAs pyramidal quantum dot (QD) and a photonic crystal membrane cavity defect. The growth of self-ordered pyramidal QDs in small (300 nm base side) tetrahedral recesses etched on (111)B GaAs substrates was developed in order to allow their integration within the thin GaAs membranes. Accurate (better than 50 nm) positioning of the QD with respect to the optical cavity mode is achieved reproducibly owing to the site control. Coupling of the dot emission with the cavity mode is evidenced in photoluminescence measurements. The deterministic positioning of the pyramidal QDs and the control of their emission spectrum opens the way for devices based on QDs integrated with coupled nanocavities. (c) 2008 American Institute of Physics. (literal)
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