Thermal Annealing Effects on Morphology and Electrical Response in Ultrathin Film Organic Transistors (Articolo in rivista)

Type
Label
  • Thermal Annealing Effects on Morphology and Electrical Response in Ultrathin Film Organic Transistors (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Alternative label
  • F. Dinelli, m.murgia, F. Biscarini, D. De Leeuw (2004)
    Thermal Annealing Effects on Morphology and Electrical Response in Ultrathin Film Organic Transistors
    in Synthetic metals
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • F. Dinelli, m.murgia, F. Biscarini, D. De Leeuw (literal)
Pagina inizio
  • 373 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 146 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • F. Dinellia, Corresponding author contact information, E-mail the corresponding author, M. Murgiaa, F. Biscarini, D.M. De Leeuwb a CNR-(a) Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Sez. di Bologna, Via P. Gobetti 101, I-40129 Bologna, Italy b Philips Research Laboratory, Prof. Holstlaan 4, 5656 AA, Eindhoven, The Netherlands (literal)
Titolo
  • Thermal Annealing Effects on Morphology and Electrical Response in Ultrathin Film Organic Transistors (literal)
Abstract
  • ltra-thin organic film transistors were annealed in vacuum at constant temperature and for different time intervals. This treatment eliminates unintentional doping and reduces hysteresis in I/V curves, both for pentacene and ?-sexithienyl, without substantially improving the charge mobility. Devices that originally exhibited high and non-ohmic contact resistance never matched the characteristics of devices with well grown electrode/semiconductor interfaces, even after annealing. Prolonging the annealing time resulted in film rupture due to either re-crystallization or molecular desorption. This process started before healing of molecular disorder at the relevant interfaces could take place. (literal)
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