http://www.cnr.it/ontology/cnr/individuo/prodotto/ID39739
Thermal Annealing Effects on Morphology and Electrical Response in Ultrathin Film Organic Transistors (Articolo in rivista)
- Type
- Label
- Thermal Annealing Effects on Morphology and Electrical Response in Ultrathin Film Organic Transistors (Articolo in rivista) (literal)
- Anno
- 2004-01-01T00:00:00+01:00 (literal)
- Alternative label
F. Dinelli, m.murgia, F. Biscarini, D. De Leeuw (2004)
Thermal Annealing Effects on Morphology and Electrical Response in Ultrathin Film Organic Transistors
in Synthetic metals
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- F. Dinelli, m.murgia, F. Biscarini, D. De Leeuw (literal)
- Pagina inizio
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- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- F. Dinellia, Corresponding author contact information, E-mail the corresponding author,
M. Murgiaa,
F. Biscarini,
D.M. De Leeuwb
a CNR-(a) Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Sez. di Bologna, Via P. Gobetti 101, I-40129 Bologna, Italy
b Philips Research Laboratory, Prof. Holstlaan 4, 5656 AA, Eindhoven, The Netherlands (literal)
- Titolo
- Thermal Annealing Effects on Morphology and Electrical Response in Ultrathin Film Organic Transistors (literal)
- Abstract
- ltra-thin organic film transistors were annealed in vacuum at constant temperature and for different time intervals. This treatment eliminates unintentional doping and reduces hysteresis in I/V curves, both for pentacene and ?-sexithienyl, without substantially improving the charge mobility. Devices that originally exhibited high and non-ohmic contact resistance never matched the characteristics of devices with well grown electrode/semiconductor interfaces, even after annealing. Prolonging the annealing time resulted in film rupture due to either re-crystallization or molecular desorption. This process started before healing of molecular disorder at the relevant interfaces could take place. (literal)
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