http://www.cnr.it/ontology/cnr/individuo/prodotto/ID39737
Correlation between morphology and field effect transistor mobility in tetracene thin films (Articolo in rivista)
- Type
- Label
- Correlation between morphology and field effect transistor mobility in tetracene thin films (Articolo in rivista) (literal)
- Anno
- 2005-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1002/adfm.200400278 (literal)
- Alternative label
F. Cicoira, C. Santato, F. Dinelli, M. Murgia, R. Zamboni, F. Biscarini, P. Heremans, M. Muccini (2005)
Correlation between morphology and field effect transistor mobility in tetracene thin films
in Advanced functional materials (Print); Wiley-VCH Verlag Gmbh, Weinheim (Germania)
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- F. Cicoira, C. Santato, F. Dinelli, M. Murgia, R. Zamboni, F. Biscarini, P. Heremans, M. Muccini (literal)
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- http://onlinelibrary.wiley.com/doi/10.1002/adfm.200400278/pdf (literal)
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Dr. F. Cicoira,Dr. C. Santato,Dr. F. Dinelli, Dr.M. Murgia, Dr.R. Zamboni,Dr. F. Biscarini,Dr.M. Muccini Consiglio nazionale dell Ricerche CNR Istituto per lo Studio dei Materiali Nanostrutturati ISMN Sezione di Bologna via p. gobetti , 101, 40129 Bologna Italy
Dr. P. Heremans Katholieke Universitaeit Leuven, Elecrical Engineering Department, Kastelpark Arenberg 10,B-3001 Leuven Belgium (literal)
- Titolo
- Correlation between morphology and field effect transistor mobility in tetracene thin films (literal)
- Abstract
- The growth of vacuum-sublimed tetracene thin films on silicon dioxide has been investigated from the early stages of the process. The effects of deposition flux and substrate silanization on film morphology and electrical properties have been explored. Tetracene shows an island growth, resulting in films with a granular structure. Both an increase in the deposition flux and the substrate silanization determine a decrease of the grain size and an improvement of the connectivity of the film in direct contact with the substrate. The hole mobility in field-effect transistors based on tetracene thin films, which also generate electroluminescence, increases with the deposition flux and values as high as 0.15 cm(2) V(-1) s(-1) are obtained. (literal)
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