Integration of organic based Schottky junctions for crossbar non-volatile memory applications (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Integration of organic based Schottky junctions for crossbar non-volatile memory applications (Articolo in rivista) (literal)

Anno

• 2008-01-01T00:00:00+01:00 (literal)

Alternative label

• Katsia, E; Tallarida, G; Ferrari, S; Bundgaard, E; Sondergaard, R; Krebs, FC (2008)
  Integration of organic based Schottky junctions for crossbar non-volatile memory applications
  in Microelectronic engineering
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Katsia, E; Tallarida, G; Ferrari, S; Bundgaard, E; Sondergaard, R; Krebs, FC (literal)

Pagina inizio

• 2439 (literal)

Pagina fine

• 2441 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 85 (literal)

Rivista

• Microelectronic engineering (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• \"[Katsia, E.; Tallarida, G.; Ferrari, S.] INFM, CNR, Lab Nazl MDM, I-20041 Milan, Italy; [Bundgaard, E.; Sondergaard, R.; Krebs, F. C.] Tech Univ Denmark, Natl Lab Sustainable Energy, DK-4000 Roskilde, Denmark (literal)

Titolo

• Integration of organic based Schottky junctions for crossbar non-volatile memory applications (literal)

Abstract

• Small size Schottky junctions using two different synthesized organic semiconductors (oligophenylene-vinylenes) were integrated by standard UV lithography into crossbar arrays. The proposed integration scheme can be applied to a wide class of organics without affecting material properties. Current-voltage characteristics were studied in order to investigate which of the tested compounds could possibly reach the requirements for non-volatile memory applications. All the investigated devices displayed good rectifying properties, ranging from 10(2) to 10(4). On the other hand, one of the compounds reveals higher conductivity and possible reasons for this behavior are discussed. (C) 2008 Elsevier B.V. All rights reserved. (literal)

Prodotto di

• Materiali, processi, e tecniche analitiche per la realizzazione di dispositivi innovativi con funzionalità logiche o di memoria non volatile integrabili su Silicio (MD.P05.007.001) (Modulo)
• Nanobiosistemi (MD.P06.010.001) (Modulo)

Autore CNR

• ELENI KATSIA (Unità di personale esterno)
• GRAZIELLA TALLARIDA (Persona)

Insieme di parole chiave

• Keywords of "Integration of organic based Schottky junctions for crossbar non-volatile memory applications" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• GRAZIELLA TALLARIDA (Persona)
• ELENI KATSIA (Unità di personale esterno)

Prodotto

• Materiali, processi, e tecniche analitiche per la realizzazione di dispositivi innovativi con funzionalità logiche o di memoria non volatile integrabili su Silicio (MD.P05.007.001) (Modulo)
• Nanobiosistemi (MD.P06.010.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Microelectronic engineering (Rivista)

Insieme di parole chiave di

• Keywords of "Integration of organic based Schottky junctions for crossbar non-volatile memory applications" (Insieme di parole chiave)