New selector based on zinc oxide grown by low temperature atomic layer deposition for vertically stacked non-volatile memory devices (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• New selector based on zinc oxide grown by low temperature atomic layer deposition for vertically stacked non-volatile memory devices (Articolo in rivista) (literal)

Anno

• 2008-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.mee.2008.07.016 (literal)

Alternative label

• Huby, N; Tallarida, G; Kutrzeba, M; Ferrari, S; Guziewicz, E; Wachnicki, L; Godlewski, M (2008)
  New selector based on zinc oxide grown by low temperature atomic layer deposition for vertically stacked non-volatile memory devices
  in Microelectronic engineering
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Huby, N; Tallarida, G; Kutrzeba, M; Ferrari, S; Guziewicz, E; Wachnicki, L; Godlewski, M (literal)

Pagina inizio

• 2442 (literal)

Pagina fine

• 2444 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 85 (literal)

Rivista

• Microelectronic engineering (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• \"[Huby, N.; Tallarida, G.; Kutrzeba, M.; Ferrari, S.] INFM, CNR, Lab MDM, I-20041 Agrate Brianza Mi, Italy; [Guziewicz, E.; Wachnicki, L.; Godlewski, M.] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland (literal)

Titolo

• New selector based on zinc oxide grown by low temperature atomic layer deposition for vertically stacked non-volatile memory devices (literal)

Abstract

• We report on the fabrication of Schottky diodes based on n-type zinc oxide (ZnO) grown by atomic layer deposition (ALD) at low temperature (100 degrees C). These structures are suitable as selector elements in highly integrated non volatile memories based on crossbar architecture. The junctions are fully realized by optical lithography and the smallest investigated structures are 3 x 3 micron^2 area. Several metals have been tested to single out the most suitable ohmic and Schottky contact materials. The electrical characterisation shows good Properties with a forward current above 10^4 A/cm^2 and a rectifying ratio of 10^5. (C) 2008 Elsevier B.V. All rights reserved. (literal)

Prodotto di

• Materiali, processi, e tecniche analitiche per la realizzazione di dispositivi innovativi con funzionalità logiche o di memoria non volatile integrabili su Silicio (MD.P05.007.001) (Modulo)
• Nanobiosistemi (MD.P06.010.001) (Modulo)

Autore CNR

• NOLWENN HUBY (Persona)
• GRAZIELLA TALLARIDA (Persona)

Insieme di parole chiave

• Keywords of "New selector based on zinc oxide grown by low temperature atomic layer deposition for vertically stacked non-volatile memory devices" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• GRAZIELLA TALLARIDA (Persona)
• NOLWENN HUBY (Persona)

Prodotto

• Materiali, processi, e tecniche analitiche per la realizzazione di dispositivi innovativi con funzionalità logiche o di memoria non volatile integrabili su Silicio (MD.P05.007.001) (Modulo)
• Nanobiosistemi (MD.P06.010.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Microelectronic engineering (Rivista)

Insieme di parole chiave di

• Keywords of "New selector based on zinc oxide grown by low temperature atomic layer deposition for vertically stacked non-volatile memory devices" (Insieme di parole chiave)