B clustering in amorphous Si (Articolo in rivista)

Type
Label
  • B clustering in amorphous Si (Articolo in rivista) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1116/1.2781760 (literal)
Alternative label
  • De Salvador, D; Bisognin, G; Di Marino, M; Napolitani, E; Carnera, A; Mirabella, S; Pecora, E; Bruno, E; Priolo, F; Graoui, H; Foad, MA; Boscherini, F (2008)
    B clustering in amorphous Si
    in Journal of vacuum science & technology. B, Microelectronics and nanometer structures
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • De Salvador, D; Bisognin, G; Di Marino, M; Napolitani, E; Carnera, A; Mirabella, S; Pecora, E; Bruno, E; Priolo, F; Graoui, H; Foad, MA; Boscherini, F (literal)
Pagina inizio
  • 382 (literal)
Pagina fine
  • 385 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 26 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • \"[De Salvador, D.; Bisognin, G.; Di Marino, M.; Napolitani, E.; Carnera, A.] Univ Padua, INFM, CNR, MATIS, I-35131 Padua, Italy; [De Salvador, D.; Bisognin, G.; Di Marino, M.; Napolitani, E.; Carnera, A.] Univ Padua, Dept Phys, I-35131 Padua, Italy; [Mirabella, S.; Pecora, E.; Bruno, E.; Priolo, F.] Catania Univ, INFM, CNR, MATIS, I-95123 Catania, Italy; [Mirabella, S.; Pecora, E.; Bruno, E.; Priolo, F.] Catania Univ, Dept Phys & Astron, I-95123 Catania, Italy; [Graoui, H.; Foad, M. A.] Appl Mat Inc, Sunnyvale, CA 94086 USA; [Boscherini, F.] Univ Bologna, Dept Phys, I-40127 Bologna, Italy; [Boscherini, F.] Univ Bologna, CNISM, I-40127 Bologna, Italy (literal)
Titolo
  • B clustering in amorphous Si (literal)
Abstract
  • The authors have investigated ultrashallow p(+)/n-junction formation by solid-phase epitaxy, by using x-ray absorption near-edge spectroscopy (XANES) measurements at the B K edge. The authors demonstrate that B clustering occurs during the very early stages of annealing-induced Si recrystallization, i.e., when B is still in the amorphous matrix. After complete regrowth, the local structure around B remains the same as in the amorphous phase, implying that B clusters are transferred to the crystalline structure. The XANES structure are assigned to B-B sp(2) bonds that are present in B clusters with two or more B atoms. Boron clustering and diffusion are further investigated by means of concentration profile analysis of ad hoc amorphous on insulator structures that evidences a clear concentration threshold for clustering and a concentration dependent B diffusion. (C) 2008 American Vacuum Society. (literal)
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