http://www.cnr.it/ontology/cnr/individuo/prodotto/ID39522
Resist-assisted atom lithography with group III elements (Articolo in rivista)
- Type
- Label
- Resist-assisted atom lithography with group III elements (Articolo in rivista) (literal)
- Anno
- 2006-01-01T00:00:00+01:00 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- A. Camposeo; O.M. Maragò; B.Fazio; B. Kloter; D. Meschede; U. Rasbach; C. Weber; E. Arimondo (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- (1)CNR-INFM, Dipartimento di Fisica E. Fermi, Università di Pisa, Via F. Buonarroti 2,56127 Pisa, Italy
(2)CNR-Istituto per i Processi Chimico-Fisici sez. Messina, via La Farina 237, 98123Messina, Italy
(3)Institut für Angewandte Physik der Universität Bonn, Wegelerstr. 8, 53115 Bonn, Germany (literal)
- Titolo
- Resist-assisted atom lithography with group III elements (literal)
- Abstract
- Resist-assisted atom lithography with group III elements, specifically
with gallium and indium, is demonstrated. Self-assembled monolayers (SAM) of nonanethiols prepared on thin sputtered gold films were exposed to a beam of neutral gallium and indium atoms through a physical mask. The interaction of the Ga and In atoms with the nonanethiol layer, followed by a wet etching process, creates well defined structures on the gold film, with features below 100 nm. The threshold of the lithographic process was estimated by optical methods and found to be around 3 gallium
atoms and 12 indium atoms per thiol molecule. Our experiments suggest that
resist-assisted atom lithography can be realized with group III elements and possibly extended to new neutral atomic species. (literal)
- Prodotto di
- Autore CNR
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