Detailed arsenic concentration profiles at Si/SiO2 interfaces (Articolo in rivista)

Type
Label
  • Detailed arsenic concentration profiles at Si/SiO2 interfaces (Articolo in rivista) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Alternative label
  • Pei, L; Duscher, G; Steen, C; Pichler, P; Ssel, HR; Napolitani, E; De Salvador, D; Piro, AM; Terrasi, AT; Severac, F; Cristiano, F; Ravichandran, K; Gupta, N; Windl, W (2008)
    Detailed arsenic concentration profiles at Si/SiO2 interfaces
    in Journal of applied physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Pei, L; Duscher, G; Steen, C; Pichler, P; Ssel, HR; Napolitani, E; De Salvador, D; Piro, AM; Terrasi, AT; Severac, F; Cristiano, F; Ravichandran, K; Gupta, N; Windl, W (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 104 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • \"[Steen, Christian; Pichler, Peter; Ssel, Heiner R.] Univ Erlangen Nurnberg, Chair Elect Devices, D-91058 Erlangen, Germany; [Pei, Lirong; Duscher, Gerd] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA; [Duscher, Gerd] Oak Ridge Natl Lab, Condensed Matter Sci Div, Oak Ridge, TN 37831 USA; [Pichler, Peter; Ssel, Heiner R.] Fraunhofer Inst Integrated Syst & Device Technol, D-91058 Erlangen, Germany; [Napolitani, Enrico; De Salvador, Davide] Univ Padua, Dipartimento Fis, I-35141 Padua, Italy; [Napolitani, Enrico; De Salvador, Davide] INFM, CNR, MATIS, I-35141 Padua, Italy; [Piro, Alberto Maria; Terrasi, A. Tonio] INFM, CNR, MATIS, I-95127 Catania, Italy; [Piro, Alberto Maria; Terrasi, A. Tonio] Univ Catania, Dipartimento Fis & Astron, I-95127 Catania, Italy; [Severac, Fabrice; Cristiano, Filadelfo] Univ Toulouse, CNRS, LAAS, F-31077 Toulouse, France; [Ravichandran, Karthik; Gupta, Naveen; Windl, Wolfgang] Ohio State Univ, Dept Mat Sci & Engn, Columbus, OH 43210 USA (literal)
Titolo
  • Detailed arsenic concentration profiles at Si/SiO2 interfaces (literal)
Abstract
  • The pile-up of arsenic at the Si/SiO2 interface after As implantation and annealing was investigated by high resolution Z-contrast imaging, electron energy-loss spectroscopy (EELS), grazing incidence x-ray fluorescence spectroscopy (GI-XRF), secondary ion mass spectrometry, x-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, as well as Hall mobility and four-point probe resistivity measurements. After properly taking into account their respective artifacts, the results of all methods are compatible with each other, with EELS and GI-XRF combined with etching providing similar spatial resolution on the nanometer scale for the dopant profile. The sheet concentration of the piled-up As at the interface was found to be similar to 1 x 10(15) cm(-2) for an implanted dose of I X 1016 cm-2 with a maximum concentration of similar to 10 at. %. The strain observed in the Z-contrast images also suggests a significant concentration of local distortions within 3 nm from the interface, which, however, do not seem to involve intrinsic point defects. (C) 2008 American Institute of Physics. (literal)
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