Mechanism of boron diffusion in amorphous silicon (Articolo in rivista)

Type
Label
  • Mechanism of boron diffusion in amorphous silicon (Articolo in rivista) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevLett.100.155901 (literal)
Alternative label
  • Mirabella, S; De Salvador, D; Bruno, E; Napolitani, E; Pecora, EF; Boninelli, S; Priolo, F (2008)
    Mechanism of boron diffusion in amorphous silicon
    in Physical review letters (Print); American Physical Society (APS), College Pk (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Mirabella, S; De Salvador, D; Bruno, E; Napolitani, E; Pecora, EF; Boninelli, S; Priolo, F (literal)
Pagina inizio
  • 155901 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 100 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • \"[Mirabella, Salvatore; Bruno, Elena; Pecora, Emanuele F.; Boninelli, Simona; Priolo, Francesco] Univ Catania, CNR, MATIS INFM, I-95123 Catania, Italy; [Mirabella, Salvatore; Bruno, Elena; Pecora, Emanuele F.; Boninelli, Simona; Priolo, Francesco] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy; [De Salvador, Davide; Napolitani, Enrico] Univ Padua, CNR, MATIS INFM, I-35131 Padua, Italy; [De Salvador, Davide; Napolitani, Enrico] Univ Padua, Dipartimento Fis, I-35131 Padua, Italy; [Pecora, Emanuele F.; Priolo, Francesco] Scuola Super Catania, I-95123 Catania, Italy (literal)
Titolo
  • Mechanism of boron diffusion in amorphous silicon (literal)
Abstract
  • \"We have elucidated the mechanism for B migration in the amorphous (a-) Si network. B diffusivity in a-Si is much higher than in crystalline Si; it is transient and increases with B concentration up to 2x10(20) B/cm(3). At higher density, B atoms in a-Si quickly precipitate. B diffusion is indirect, mediated by dangling bonds (DB) present in a-Si. The density of DB is enhanced by B accommodation in the a-Si network and decreases because of a-Si relaxation. Accurate data simulations allow one to extract the DB diffusivity, whose activation energy is 2.6 eV. Implications of these results are discussed.\" (literal)
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