Structural characterization of GaAs and InAs nanowires by means of Raman spectroscopy (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Structural characterization of GaAs and InAs nanowires by means of Raman spectroscopy (Articolo in rivista) (literal)

Anno

• 2008-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.3026726 (literal)

Alternative label

• Begum, N; Piccin, M; Jabeen, F; Bais, G; Rubini, S; Martelli, F; Bhatti, AS (2008)
  Structural characterization of GaAs and InAs nanowires by means of Raman spectroscopy
  in Journal of applied physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Begum, N; Piccin, M; Jabeen, F; Bais, G; Rubini, S; Martelli, F; Bhatti, AS (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 104 (literal)

Rivista

• Journal of applied physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 6 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 104 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• \"[Begum, N.; Piccin, M.; Jabeen, F.; Bais, G.; Rubini, S.; Martelli, F.] CNR, INFM, Lab Nazl TASC, I-34012 Trieste, Italy; [Begum, N.; Bhatti, A. S.] COMSATS Inst Informat Technol, Dept Phys, Islamabad, Pakistan; [Piccin, M.] Univ Trieste, Ctr Eccellenza Mat Nanostrutturati, I-34127 Trieste, Italy; [Jabeen, F.] Sincrotrone Trieste SCpA, I-34012 Trieste, Italy (literal)

Titolo

• Structural characterization of GaAs and InAs nanowires by means of Raman spectroscopy (literal)

Abstract

• We report Raman studies of GaAs and InAs nanowires (NWs) grown on SiO2 and GaAs surfaces by means of catalyst-assisted molecular beam epitaxy. We have investigated several tens of NWs grown using either Mn or Au as a catalyst. The LO and TO phonon lines of the NWs showed an energy downshift and a broadening as compared to the lines usually observed in the corresponding bulk materials. A doublet is sometimes observed in the LO region due to the observation of a signal attributed to the surface optical (SO) phonon. The energy position of the SO phonon agrees with the values expected considering the section diameter of the NWs. LO and TO downshifts are due to the presence of structural defects within the NWs. The larger the energy downshift, the smaller the dimension of the defect-free regions. The results demonstrate that different catalysts provide wires with comparable crystal quality. The measurements also point out that differences in defect density can be found in wires coming from the same batch indicating that a substantial effort will be needed to obtain high homogeneities of the NW quality. (literal)

Prodotto di

• Sintesi e studio delle proprieta' strutturali, ottiche ed elettroniche di sistemi aventi almeno una dimensione nanometrica (MD.P06.018.001) (Modulo)

Autore CNR

• SILVIA RUBINI (Unità di personale interno)
• FAUSTINO MARTELLI (Unità di personale interno)

Insieme di parole chiave

• Parole chiave di "Structural characterization of GaAs and InAs nanowires by means of Raman spectroscopy" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• FAUSTINO MARTELLI (Unità di personale interno)
• SILVIA RUBINI (Unità di personale interno)

Prodotto

• Sintesi e studio delle proprieta' strutturali, ottiche ed elettroniche di sistemi aventi almeno una dimensione nanometrica (MD.P06.018.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)

Insieme di parole chiave di

• Parole chiave di "Structural characterization of GaAs and InAs nanowires by means of Raman spectroscopy" (Insieme di parole chiave)