Self-catalyzed growth of GaAs nanowires on cleaved Si by molecular beam epitaxy (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Self-catalyzed growth of GaAs nanowires on cleaved Si by molecular beam epitaxy (Articolo in rivista) (literal)

Anno

• 2008-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1088/0957-4484/19/27/275711 (literal)

Alternative label

• Jabeen, F; Grillo, V; Rubini, S; Martelli, F (2008)
  Self-catalyzed growth of GaAs nanowires on cleaved Si by molecular beam epitaxy
  in Nanotechnology (Bristol. Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Jabeen, F; Grillo, V; Rubini, S; Martelli, F (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 19 (literal)

Rivista

• Nanotechnology (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• \"[Jabeen, Fauzia; Grillo, Vincenzo; Rubini, Silvia; Martelli, Faustino] CNR, TASC INFM, Lab Nazl, I-34012 Trieste, Italy; [Jabeen, Fauzia] Sincrotrone Trieste SCpA, I-34012 Trieste, Italy (literal)

Titolo

• Self-catalyzed growth of GaAs nanowires on cleaved Si by molecular beam epitaxy (literal)

Abstract

• Self-assembled GaAs nanowires have been grown on Si by molecular beam epitaxy without the use of any outside metal catalyst. The growth occurs on Si facets obtained by the cleavage of Si(100) substrates. The growth has been obtained with or without Ga pre-deposition. In both cases two kinds of nanowires have been obtained. The wires of the first type clearly present a Ga droplet at their free end and have a lattice structure that is wurtzite for wide regions beneath the Ga droplet. The second type, in contrast, ends with pyramidally shaped GaAs and has a crystal lattice that is mainly zincblende with only a few and small wurtzite regions, if any. The Ga-ended nanowires are longer than the others and thinner on average. The experimental findings suggest that the two types of nanowires grow after different growth processes. (literal)

Prodotto di

• Sintesi e studio delle proprieta' strutturali, ottiche ed elettroniche di sistemi aventi almeno una dimensione nanometrica (MD.P06.018.001) (Modulo)

Autore CNR

• SILVIA RUBINI (Unità di personale interno)
• FAUZIA JABEEN (Persona)
• FAUSTINO MARTELLI (Unità di personale interno)
• VINCENZO GRILLO (Persona)

Insieme di parole chiave

• Parole chiave di "Self-catalyzed growth of GaAs nanowires on cleaved Si by molecular beam epitaxy" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• VINCENZO GRILLO (Persona)
• FAUSTINO MARTELLI (Unità di personale interno)
• SILVIA RUBINI (Unità di personale interno)
• FAUZIA JABEEN (Persona)

Prodotto

• Sintesi e studio delle proprieta' strutturali, ottiche ed elettroniche di sistemi aventi almeno una dimensione nanometrica (MD.P06.018.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Nanotechnology (Rivista)

Insieme di parole chiave di

• Parole chiave di "Self-catalyzed growth of GaAs nanowires on cleaved Si by molecular beam epitaxy" (Insieme di parole chiave)