Photoluminescene under magnetic field and hydrostatic pressure for probing the electronic properties of GaAsN (Articolo in rivista)

Type
Label
  • Photoluminescene under magnetic field and hydrostatic pressure for probing the electronic properties of GaAsN (Articolo in rivista) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1002/pssa.200777462 (literal)
Alternative label
  • Polimeni, A; Pettinari, G; Trotta, R; Masia, F; Felici, M; Capizzi, M; Lindsay, A; O'Reilly, EP; Niebling, T; Stolz, W; Klar, PJ; Martelli, F; Rubini, S (2008)
    Photoluminescene under magnetic field and hydrostatic pressure for probing the electronic properties of GaAsN
    in Physica status solidi. A, Applications and materials science (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Polimeni, A; Pettinari, G; Trotta, R; Masia, F; Felici, M; Capizzi, M; Lindsay, A; O'Reilly, EP; Niebling, T; Stolz, W; Klar, PJ; Martelli, F; Rubini, S (literal)
Pagina inizio
  • 107 (literal)
Pagina fine
  • 113 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 205 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • \"[Polimeni, A.; Pettinari, G.; Trotta, R.; Masia, F.; Felici, M.; Capizzi, M.] Univ Roma La Sapienza, CNISM, Dipartimento Fis, I-00185 Rome, Italy; [Lindsay, A.; O'Reilly, E. P.] Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Lee Maltings, Cork, Ireland; [Stolz, W.] Univ Marburg, Ctr Mat Sci, Dept Phys, D-35032 Marburg, Germany; [Klar, P. J.] Univ Giessen, Inst Phys 1, D-35392 Giessen, Germany; [Martelli, F.; Rubini, S.] CNR, TASC, I-34012 Trieste, Italy (literal)
Titolo
  • Photoluminescene under magnetic field and hydrostatic pressure for probing the electronic properties of GaAsN (literal)
Abstract
  • The puzzling electronic properties of GaAsN have been investigated through the compositional dependence of two highly sensitive band structure parameters: the electron effective mass, m,, and the electron gyromagnetic factor, g(e). In the N concentration range from 0% to 0.7%, both m(e) and g(e) show a highly nonlinear dependence on N composition that can be explained in terms of alternating on- and off-resonance conditions between the red-shifting conduction band edge and specific energy-pinned N cluster states. Furthermore, the electronic properties of the material are studied under hydrostatic pressure, P. This allows tuning in a same sample the interaction between extended and localized states and disclosing a hierarchy between different nitrogen complexes as regards the extent of the perturbation these complexes exert on the electronic properties of the GaAs host crystal. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. (literal)
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