Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors (Articolo in rivista)

Type
Label
  • Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.3627186 (literal)
Alternative label
  • Frazzetto A, Giannazzo F, Fiorenza P, Raineri V, Roccaforte F (2011)
    Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Frazzetto A, Giannazzo F, Fiorenza P, Raineri V, Roccaforte F (literal)
Pagina inizio
  • 072117 (literal)
Pagina fine
  • 072117 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 99 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. Ist Microelettron Microsistemi CNR IMM, Consiglio Nazl Ric, I-95121 Catania, Italy 2. Univ Catania, Scuola Super Catania, I-95123 Catania, Italy (literal)
Titolo
  • Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors (literal)
Abstract
  • The mechanism limiting the channel mobility in metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated in Al-implanted 4H-SiC is discussed comparing different post-implantation annealings. In spite of the improved interfacial morphology in carbon capped samples during annealing, the observed reduction of the mobility (from 40 to 24 cm(2) V(-1) s(-1)) suggests that interfacial roughness does not significantly impact the transport in the channel. Furthermore, the temperature dependence of the mobility demonstrates that Coulomb scattering is the main degradation mechanism due to the presence of trapped charges at the SiO(2)/SiC interface. (literal)
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