Improved Performance of In(0.53)Ga(0.47)As-Based Metal-Oxide-Semiconductor Capacitors with Al:ZrO(2) Gate Dielectric Grown by Atomic Layer Deposition (Articolo in rivista)

Type
Label
  • Improved Performance of In(0.53)Ga(0.47)As-Based Metal-Oxide-Semiconductor Capacitors with Al:ZrO(2) Gate Dielectric Grown by Atomic Layer Deposition (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Alternative label
  • Molle A, Lamagna L, Wiemer C, Spiga S, Fanciulli M, Merckling C, Brammertz G, Caymax M (2011)
    Improved Performance of In(0.53)Ga(0.47)As-Based Metal-Oxide-Semiconductor Capacitors with Al:ZrO(2) Gate Dielectric Grown by Atomic Layer Deposition
    in Applied physics express
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Molle A, Lamagna L, Wiemer C, Spiga S, Fanciulli M, Merckling C, Brammertz G, Caymax M (literal)
Pagina inizio
  • 094103 (literal)
Pagina fine
  • 094103 (literal)
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  • 4 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. IMM CNR, Lab MDM, I-20864 Agrate Brianza, MB, Italy 2. Univ Milano Bicocca, Dipartimento Sci Mat, Milan, Italy 3. IMEC, B-3001 Louvain, Belgium (literal)
Titolo
  • Improved Performance of In(0.53)Ga(0.47)As-Based Metal-Oxide-Semiconductor Capacitors with Al:ZrO(2) Gate Dielectric Grown by Atomic Layer Deposition (literal)
Abstract
  • Atomic layer deposition of Al:ZrO(2) films on In(0.53)Ga(0.47)As substrates is shown to be a promising route to boost the oxide permittivity with respect to Al(2)O(3) gate dielectrics and concomitantly take benefit from the reducing effect of the trimethylaluminum precursor on the In(0.53)Ga(0.47)As surface. We demonstrates that increasing the number of initial Al(2)O(3) cycles in the growth sequence can improve the physical quality and the electrical response of the Al:ZrO(2)/In(0.53)Ga(0.47)As interface while preserving the overall composition of the oxide. (literal)
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