From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices (Articolo in rivista)

Type
Label
  • From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Alternative label
  • Pro T, Buckley J, Barattin R, Calborean A, Aiello V, Nicotra G, Huang K, Gely M, Delapierre G, Jalaguier E, Duclairoir F, Chevalier N, Lombardo S, Maldivi P, Ghibaudo G, De Salvo B, Deleonibus S (2011)
    From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices
    in IEEE transactions on nanotechnology
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Pro T, Buckley J, Barattin R, Calborean A, Aiello V, Nicotra G, Huang K, Gely M, Delapierre G, Jalaguier E, Duclairoir F, Chevalier N, Lombardo S, Maldivi P, Ghibaudo G, De Salvo B, Deleonibus S (literal)
Pagina inizio
  • 275 (literal)
Pagina fine
  • 283 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 10 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. MINTEK, French Atom Energy Commiss CEA LETI, Elect & Informat Technol Lab, F-38054 Grenoble, France 2. French Atom Energy Commiss CEA INAC, Inst Nanosci & Cryogen, F-38054 Grenoble, France 3. MINTEK, Grenoble Polytech Inst INPG, IMEP, Natl Ctr Sci Res,CNRS, F-38016 Grenoble, France 4. Natl Res 533 Council IMM CNR, Inst Microelect & Microsyst, I-95121 Catania, Italy (literal)
Titolo
  • From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices (literal)
Abstract
  • In this paper, an extensive investigation of hybrid molecular/Si field-effect memories is presented, where redox ferrocene (Fc) molecules play the role of the memory charge storage nodes. Engineering of the organic linkers between Fc and Si is achieved by grafting Fc with different linker lengths. The study shows a clear correlation between results from atomistic computational density functional theory, electrochemical measurements (cyclic voltammetry) and electrical data obtained by a detailed study on capacitors and pseudo-MOS devices. Physical-chemical analyses (atomic force microscopy, high-resolution transmission electron microscopy, and X-ray photoelectron spectroscopy), corroborate the quality of molecular layers on devices. (literal)
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