Control of filament size and reduction of reset current below 10 mu A in NiO resistance switching memories (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Control of filament size and reduction of reset current below 10 mu A in NiO resistance switching memories (Articolo in rivista) (literal)

Anno

• 2011-01-01T00:00:00+01:00 (literal)

Alternative label

• Nardi F, Ielmini D, Cagli C, Spiga S, Fanciulli M, Goux L, Wouters DJ (2011)
  Control of filament size and reduction of reset current below 10 mu A in NiO resistance switching memories
  in Solid-state electronics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Nardi F, Ielmini D, Cagli C, Spiga S, Fanciulli M, Goux L, Wouters DJ (literal)

Pagina inizio

• 42 (literal)

Pagina fine

• 47 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 58 (literal)

Rivista

• Solid-state electronics (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. Politecn Milan, DEI, I-20133 Milan, Italy 2. IUNET, Milan, Italy 3. CNR, IMM, Lab MDM, Agrate Brianza, Italy 4. IMEC, B-3001 Louvain, Belgium (literal)

Titolo

• Control of filament size and reduction of reset current below 10 mu A in NiO resistance switching memories (literal)

Abstract

• Resistive-switching memory (RRAM) is receiving a growing deal of research interest as a possible solution for high-density, 3D nonvolatile memory technology. One of the main obstacle toward size reduction of the memory cell and its scaling is the typically large current I(reset) needed for the reset operation. In fact, a large I(reset) negatively impacts the scaling possibilities of the select diode in a cross-bar array structure. Reducing I(reset) is therefore mandatory for the development of high-density RRAM arrays. This work addresses the reduction of I(reset) in NiO-based RRAM by control of the filament size in 1 transistor-1 resistor (1T1R) cell devices. I(reset) is demonstrated to be scalable and controllable below 10 mu A. The significance of these results for the future scaling of diode-selected cross-bar arrays is finally discussed. (literal)

Prodotto di

• Materiali e dispositivi nanoscalati per applicazioni in memorie non-volatili, architetture neuromorfiche e neuroelettronica (MD.P05.024.001) (Modulo)
• Materiali autoassemblanti per applicazioni nanotecnologiche (MD.P05.025.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• SABINA SPIGA (Persona)
• MARCO FANCIULLI (Persona)

Incoming links:

Autore CNR di

• SABINA SPIGA (Persona)
• MARCO FANCIULLI (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali e dispositivi nanoscalati per applicazioni in memorie non-volatili, architetture neuromorfiche e neuroelettronica (MD.P05.024.001) (Modulo)
• Materiali autoassemblanti per applicazioni nanotecnologiche (MD.P05.025.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Solid-state electronics (Rivista)