Structural and electrical properties of Er-doped HfO(2) and of its interface with Ge (001) (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Structural and electrical properties of Er-doped HfO(2) and of its interface with Ge (001) (Articolo in rivista) (literal)

Anno

• 2011-01-01T00:00:00+01:00 (literal)

Alternative label

• Wiemer C, Baldovino S, Lamagna L, Perego M, Schamm-Chardon S, Fanciulli M (2011)
  Structural and electrical properties of Er-doped HfO(2) and of its interface with Ge (001)
  in Microelectronic engineering
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Wiemer C, Baldovino S, Lamagna L, Perego M, Schamm-Chardon S, Fanciulli M (literal)

Pagina inizio

• 415 (literal)

Pagina fine

• 418 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 88 (literal)

Rivista

• Microelectronic engineering (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. IMM CNR, Lab MDM, I-20864 Agrate Brianza, MB, Italy 2. Univ Milano Bicocca, Dipartimento Sci Mat, Milan, Italy 3. CNRS, CEMES, F-31055 Toulouse 4, France 4. Univ Toulouse, NMat Grp, F-31055 Toulouse 4, France (literal)

Titolo

• Structural and electrical properties of Er-doped HfO(2) and of its interface with Ge (001) (literal)

Abstract

• Er-doped HfO(2) thin films with Er content ranging from 0% to 15% are deposited by atomic layer deposition on native oxide free Ge(001). The crystallographic phase is investigated by X-ray diffraction and is found to depend on the Er%. The cubic fluorite structure develops on Ge for Er% as low as 4% and is stable after annealing at 400 degrees C in N(2). Microstrain increases with increasing the Er content within the fluorite structure. Time of flight secondary ion mass and electron energy loss spectroscopy evidence a Ge diffusion from the substrate that results in the formation of a Ge-rich interfacial region which does not present a structural discontinuity with the oxide. The diffusion of Ge is enhanced by the annealing and causes a reordering of the crystal lattice. In annealed films the interface defect density measured by low temperature conductance measurements is found to decrease with decreasing the Er content. (literal)

Prodotto di

• Materiali autoassemblanti per applicazioni nanotecnologiche (MD.P05.025.001) (Modulo)
• Materiali e dispositivi nanoscalati per applicazioni in memorie non-volatili, architetture neuromorfiche e neuroelettronica (MD.P05.024.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• LUCA LAMAGNA (Persona)
• CLAUDIA WIEMER (Unità di personale interno)
• MICHELE PEREGO (Unità di personale interno)
• MARCO FANCIULLI (Unità di personale esterno)

Incoming links:

Autore CNR di

• CLAUDIA WIEMER (Unità di personale interno)
• MICHELE PEREGO (Unità di personale interno)
• MARCO FANCIULLI (Unità di personale esterno)
• LUCA LAMAGNA (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali e dispositivi nanoscalati per applicazioni in memorie non-volatili, architetture neuromorfiche e neuroelettronica (MD.P05.024.001) (Modulo)
• Materiali autoassemblanti per applicazioni nanotecnologiche (MD.P05.025.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Microelectronic engineering (Rivista)