http://www.cnr.it/ontology/cnr/individuo/prodotto/ID36867
Combining HRTEM-EELS nano-analysis with capacitance-voltage measurements to evaluate high-kappa thin films deposited on Si and Ge as candidate for future gate dielectrics (Articolo in rivista)
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- Label
- Combining HRTEM-EELS nano-analysis with capacitance-voltage measurements to evaluate high-kappa thin films deposited on Si and Ge as candidate for future gate dielectrics (Articolo in rivista) (literal)
- Anno
- 2011-01-01T00:00:00+01:00 (literal)
- Alternative label
Schamm-Chardon S, Coulon PE, Lamagna L, Wiemer C, Baldovino S, Fanciulli M (2011)
Combining HRTEM-EELS nano-analysis with capacitance-voltage measurements to evaluate high-kappa thin films deposited on Si and Ge as candidate for future gate dielectrics
in Microelectronic engineering
(literal)
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- Schamm-Chardon S, Coulon PE, Lamagna L, Wiemer C, Baldovino S, Fanciulli M (literal)
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- 1. CNRS, CEMES, F-31055 Toulouse 4, France
2. Univ Toulouse, NMat Grp, F-31055 Toulouse 4, France
3. IMM CNR, Lab MDM, I-20041 Agrate Brianza, MB, Italy
4. Univ Milano Bicocca, Dipartimento Sci Mat, Milan, Italy (literal)
- Titolo
- Combining HRTEM-EELS nano-analysis with capacitance-voltage measurements to evaluate high-kappa thin films deposited on Si and Ge as candidate for future gate dielectrics (literal)
- Abstract
- Aberration corrected transmission electron microscopy and electron spectroscopy are combined with electrical measurements for the quantitative description of the structural, chemical and dielectric parameters of rare earth/transition metal oxides thin films. Atomic structure near the interface and elemental profiles across the interface up to the surface of La-doped ZrO(2) and Er-doped HfO(2) films prepared by atomic layer deposition on Si(100) and Ge(100) are determined. Interfacial layers unavoidably form between the semiconductor substrate and the dielectric oxide after deposition and annealing. They are evidenced from a structural and chemical point of view. From the knowledge of the chemical extent of the interfacial layer and of the accumulation capacitance of the stack, it is possible to recover the dielectric constant of both the interfacial layer and the high-kappa oxide layer constituting the stack using a multilayers capacitor model approach. Oxides with permittivities higher than 30 are stabilized. Interfacial layers, silicate/germanate in composition, with permittivites, respectively, tripled/doubled compared to the one of SiO(2) are evidenced. (literal)
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