Nanoscale amorphization, bending and recrystallization in silicon nanowires (Articolo in rivista)

Type
Label
  • Nanoscale amorphization, bending and recrystallization in silicon nanowires (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1007/s00339-010-6040-2 (literal)
Alternative label
  • Pecora EF, Irrera A, Boninelli S, Romano L, Spinella C, Priolo F (2011)
    Nanoscale amorphization, bending and recrystallization in silicon nanowires
    in Applied physics. A, Materials science & processing (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Pecora EF, Irrera A, Boninelli S, Romano L, Spinella C, Priolo F (literal)
Pagina inizio
  • 13 (literal)
Pagina fine
  • 19 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 102 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 1 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. CNR, MATIS IMM, I-95123 Catania, Italy 2. Univ Catania, Dept Phys & Astron, I-95123 Catania, Italy 3. CNR, IMM, I-95125 Catania, Italy 4. CSFNSM, I-95125 Catania, Italy (literal)
Titolo
  • Nanoscale amorphization, bending and recrystallization in silicon nanowires (literal)
Abstract
  • Controllable and uniform doping of nanowires (NWs) is the ultimate challenge prior to their effective application. Si NWs amorphize and bend toward the impinging ions under ion irradiation as a result of viscous flow. We demonstrate that thermal annealing induces a full recovery of the crystalline phase corresponding to the unbending of the NWs. The competition between Solid Phase Epitaxy and Random Nucleation and Growth at the nanoscale is the key parameter controlling the recovery. (literal)
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