Capacitive RF MEMS Switches With Tantalum-Based Materials (Articolo in rivista)

Type
Label
  • Capacitive RF MEMS Switches With Tantalum-Based Materials (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1109/JMEMS.2011.2107884 (literal)
Alternative label
  • Persano A, Cola A, De Angelis G, Taurino A, Siciliano P, Quaranta F (2011)
    Capacitive RF MEMS Switches With Tantalum-Based Materials
    in Journal of microelectromechanical systems
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Persano A, Cola A, De Angelis G, Taurino A, Siciliano P, Quaranta F (literal)
Pagina inizio
  • 365 (literal)
Pagina fine
  • 370 (literal)
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  • 20 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 6 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 2 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [1] Institute for Microelectronics and Microsystems, National Research Council (IMM-CNR), Unit of Lecce, 73100 Lecce, Italy; [2] Institute for Microelectronics and Microsystems, National Research Council (IMM-CNR), Unit of Rome, 00133 Rome, Italy (literal)
Titolo
  • Capacitive RF MEMS Switches With Tantalum-Based Materials (literal)
Abstract
  • In this paper, shunt capacitive RF microelectromechanical systems (MEMS) switches are developed in III-V technology using tantalum nitride (TaN) and tantalum pentoxide (Ta2O5) for the actuation lines and the dielectric layers, respectively. A compositional, structural, and electrical characterization of the TaN and Ta2O5 films is preliminarily performed, demonstrating that they are valid alternatives to the conventional materials used in III-V technology for RF MEMS switches. Specifically, it is found that the TaN film resistivity can be tuned from 0.01 to 30 ohmcm . cm by changing the deposition parameters. On the other hand, dielectric Ta2O5 films show a low leakage-current density of few nanoamperes per square centimeter for E similar to 1 MV/cm, a high breakdown field of 4 MV/cm, and a high dielectric constant of 32. The realized switches show good actuation voltages, in the range of 15-20 V, an insertion loss better than -0.8 dB up to 30 GHz, and an isolation of similar to -40 dB at the resonant frequency, which is, according to bridge length, between 15 and 30 GHz. A comparison between the measured S-parameter values and the results of a circuit simulation is also presented and discussed, providing useful information on the operation of the fabricated switches. (literal)
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