Crystallization of Deposited Amorphous Silicon by Infrared Laser Irradiation (Articolo in rivista)

Type
Label
  • Crystallization of Deposited Amorphous Silicon by Infrared Laser Irradiation (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Alternative label
  • Ruggeri R, Privitera V, Spinella C, Fazio E, Neri F, De Bastiani R, Grimaldi MG, Di Stefano MA, Di Marco S, Mannino G (2011)
    Crystallization of Deposited Amorphous Silicon by Infrared Laser Irradiation
    in Journal of the Electrochemical Society
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Ruggeri R, Privitera V, Spinella C, Fazio E, Neri F, De Bastiani R, Grimaldi MG, Di Stefano MA, Di Marco S, Mannino G (literal)
Pagina inizio
  • H25 (literal)
Pagina fine
  • H29 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 158 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. Univ Messina, Dipartimento Fis Mat & Ingn Elettron, I-98166 Messina, Italy 2. CNR IMM, I-95121 Catania, Italy 3. Univ Catania, Dipartimento Fis & Astron, I-95124 Catania, Italy 4. STMicroelect, I-95121 Catania, Italy (literal)
Titolo
  • Crystallization of Deposited Amorphous Silicon by Infrared Laser Irradiation (literal)
Abstract
  • We investigated the effect of infrared continous wave laser irradiation on amorphous silicon layers deposited by plasma enhanced chemical vapor deposition. Crystallization occurs via spontaneous nucleation at high temperature or by layer melting and solidification. Amorphous layers of thickness in the range 50-1000 nm have been crystallized up to 80% of their volume. We observed a two-dimensional growth when the thickness is 50 nm, whereas a three-dimensional growth occurs for thicker layers with an average grain size of < 30 nm, weakly dependent on the thickness. We also found that hydrogen desorption occurs without layer degradation, regardless of the layer thickness. The coalescence of hydrogen before outdiffusion produces voids only for layers thicker than 200 nm, whose presence reduces the average grain size by a factor of 2-3. (literal)
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