Adiabatic charge control in a single donor atom transistor (Articolo in rivista)

Type
Label
  • Adiabatic charge control in a single donor atom transistor (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.3551735 (literal)
Alternative label
  • Enrico Prati,? Matteo Belli, Simone Cocco, Guido Petretto, Marco Fanciulli (2011)
    Adiabatic charge control in a single donor atom transistor
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Enrico Prati,? Matteo Belli, Simone Cocco, Guido Petretto, Marco Fanciulli (literal)
Pagina inizio
  • 053109-1 (literal)
Pagina fine
  • 053109-3 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://scitation.aip.org/content/aip/journal/apl/98/5/10.1063/1.3551735 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 98 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 5 (literal)
Note
  • Scopu (literal)
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. IMM CNR, Lab MDM, I-20041 Agrate Brianza, Italy 2. Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy (literal)
Titolo
  • Adiabatic charge control in a single donor atom transistor (literal)
Abstract
  • We charge an individual donor quantum dot with an electron originally stored in another quantum dot in its proximity. The single arsenic donor quantum dot and the electrostatic quantum dot in parallel are contained in a silicon nanometric field effect transistor. Their different coupling capacitances with the control and back gates determine a honeycomb pattern at high control gate voltage. It is therefore possible to control the exchange coupling of an electron of the quantum dot with the electrons bound to the donor quantum dot toward the realization of a physical qubit for quantum information processing applications. (literal)
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