Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization (Articolo in rivista) (literal)

Anno

• 2011-01-01T00:00:00+01:00 (literal)

Alternative label

• Greco G, Giannazzo F, Frazzetto A, Raineri V, Roccaforte F (2011)
  Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization
  in Nanoscale research letters (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Greco G, Giannazzo F, Frazzetto A, Raineri V, Roccaforte F (literal)

Pagina inizio

• 132 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 6 (literal)

Rivista

• Nanoscale research letters (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. Ist Microelettron & Microsistemi CNR IMM, Consiglio Nazl Ric, I-95121 Catania, Italy 2. Univ Catania, Scuola Super Catania, I-95124 Catania, Italy (literal)

Titolo

• Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization (literal)

Abstract

• The effects of near-surface processing on the properties of AlGaN/GaN heterostructures were studied, combining conventional electrical characterization on high-electron mobility transistors (HEMTs), with advanced characterization techniques with nanometer scale resolution, i.e., transmission electron microscopy, atomic force microscopy (AFM) and conductive atomic force microscopy (C-AFM). In particular, a CHF(3)-based plasma process in the gate region resulted in a shift of the threshold voltage in HEMT devices towards less negative values. Two-dimensional current maps acquired by C-AFM on the sample surface allowed us to monitor the local electrical modifications induced by the plasma fluorine incorporated in the material. The results are compared with a recently introduced gate control processing: the local rapid thermal oxidation process of the AlGaN layer. By this process, a controlled thin oxide layer on surface of AlGaN can be reliably introduced while the resistance of the layer below increase locally. (literal)

Prodotto di

• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)

Autore CNR

• FILIPPO GIANNAZZO (Persona)
• FABRIZIO ROCCAFORTE (Persona)
• GIUSEPPE GRECO (Unità di personale esterno)
• VITO RAINERI (Persona)
• ALESSIA MARIA FRAZZETTO (Persona)

Incoming links:

Autore CNR di

• FABRIZIO ROCCAFORTE (Persona)
• VITO RAINERI (Persona)
• FILIPPO GIANNAZZO (Persona)
• ALESSIA MARIA FRAZZETTO (Persona)
• GIUSEPPE GRECO (Unità di personale esterno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Nanoscale research letters (Rivista)