Al(2)O(3) stacks on In(0.53)Ga(0.47)As substrates: In situ investigation of the interface (Articolo in rivista)

Type
Label
  • Al(2)O(3) stacks on In(0.53)Ga(0.47)As substrates: In situ investigation of the interface (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Alternative label
  • Fusi M, Lamagna L, Spiga S, Fanciulli M, Brammertz G, Merckling C, Meuris M, Molle A (2011)
    Al(2)O(3) stacks on In(0.53)Ga(0.47)As substrates: In situ investigation of the interface
    in Microelectronic engineering
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Fusi M, Lamagna L, Spiga S, Fanciulli M, Brammertz G, Merckling C, Meuris M, Molle A (literal)
Pagina inizio
  • 435 (literal)
Pagina fine
  • 439 (literal)
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  • 88 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. IMM CNR, Lab MDM, I-20041 Agrate Brianza, MB, Italy 2. IMEC, B-3001 Louvain, Belgium 3. Univ Milano Bicocca, Dipartimento Sci Mat, Milan, Italy (literal)
Titolo
  • Al(2)O(3) stacks on In(0.53)Ga(0.47)As substrates: In situ investigation of the interface (literal)
Abstract
  • In this work we present an in situ investigation of the interface composition between an In(0.53)Ga(0.47)As substrate and an Al(2)O(3) oxide grown by molecular beam deposition in ultra high vacuum conditions. In the effort to improve the chemical quality of the interface, reduction of semiconductor-oxygen bonding at the interface can be obtained by growing a few angstrom thick pure Al layer before starting exposure of the surface to the atomic oxygen flux. Conversely, when a Ge interface passivation layer is intercalated between the semiconductor and the oxide stack, the interface chemistry is governed by Ge reaction with other species (Al, O), leading only to a partial suppression of the interface oxides. (literal)
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