Structural and transport properties in alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperature (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Structural and transport properties in alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperature (Articolo in rivista) (literal)

Anno

• 2011-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1088/0022-3727/44/25/255302 (literal)

Alternative label

• Frazzetto A, Giannazzo F, Lo Nigro R, Raineri V, Roccaforte F (2011)
  Structural and transport properties in alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperature
  in Journal of physics. D, Applied physics (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Frazzetto A, Giannazzo F, Lo Nigro R, Raineri V, Roccaforte F (literal)

Pagina inizio

• 255302-1 (literal)

Pagina fine

• 255302-9 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 44 (literal)

Rivista

• Journal of physics. D, Applied physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 9 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 25 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. CNR, IMM, I-95121 Catania, Italy 2. Univ Catania, Scuola Super Catania, I-95123 Catania, Italy (literal)

Titolo

• Structural and transport properties in alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperature (literal)

Abstract

• In this paper, the transport properties of alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted silicon carbide (4H-SiC) were studied. The morphology of p-type implanted 4H-SiC was controlled using a capping layer during post-implantation activation annealing at 1700 °C. The different morphological conditions do not affect the macroscopic electrical properties of the implanted SiC (such as the sheet resistance or the mobility). On the other hand, the improved morphology of implanted SiC allows us to achieve a flatter Ti/Al surface and a lower specific contact resistance. The temperature dependence of the specific resistance of the contacts was studied to obtain physical insights into the carrier transport mechanism at the metal/SiC interface. The fit comparing several models shows that thermionic field emission is the dominant transport mechanism through the metal/SiC interface, and that a reduction in the barrier height from 0.51 to 0.46 eV is associated with the improvement of the Ohmic properties. Transmission electron microscopy analysis showed the presence of a laterally inhomogeneous microstructure of the metal/SiC interface. The reduction in the barrier height could be correlated with the different microstructures of the interfacial region. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)
• Materiali multifunzionali, e innovativi per componenti integrati (MD.P05.003.002) (Modulo)

Autore CNR

• ALESSIA MARIA FRAZZETTO (Persona)
• FILIPPO GIANNAZZO (Persona)
• VITO RAINERI (Persona)
• RAFFAELLA LO NIGRO (Unità di personale interno)
• FABRIZIO ROCCAFORTE (Persona)

Insieme di parole chiave

• Keywords of "Structural and transport properties in alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperature" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• FABRIZIO ROCCAFORTE (Persona)
• VITO RAINERI (Persona)
• FILIPPO GIANNAZZO (Persona)
• RAFFAELLA LO NIGRO (Unità di personale interno)
• ALESSIA MARIA FRAZZETTO (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)
• Materiali multifunzionali, e innovativi per componenti integrati (MD.P05.003.002) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of physics. D, Applied physics (Rivista)

Insieme di parole chiave di

• Keywords of "Structural and transport properties in alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperature" (Insieme di parole chiave)