Solid phase phosphorous activation in implanted silicon by excimer laser irradiation (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Solid phase phosphorous activation in implanted silicon by excimer laser irradiation (Articolo in rivista) (literal)

Anno

• 2011-01-01T00:00:00+01:00 (literal)

Alternative label

• Fisicaro G, Italia M, Privitera V, Piccitto G, Huet K, Venturini J, La Magna A (2011)
  Solid phase phosphorous activation in implanted silicon by excimer laser irradiation
  in Journal of applied physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Fisicaro G, Italia M, Privitera V, Piccitto G, Huet K, Venturini J, La Magna A (literal)

Pagina inizio

• 113513 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 109 (literal)

Rivista

• Journal of applied physics (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy 2. CNR IMM, I-95121 Catania, Italy 3. Excico, F-92239 Gennevilliers, France (literal)

Titolo

• Solid phase phosphorous activation in implanted silicon by excimer laser irradiation (literal)

Abstract

• The activation mechanism in phosphorous implanted silicon under excimer laser irradiation is investigated. The activation efficiency in the solid phase has been measured in a wide range of irradiation conditions, tuning the laser fluence in the sub-, partial, and total melting regime. Moreover, fixing the fluence, the activation as a function of the shot number has been analyzed. The total active fraction varies by several orders of magnitude and shows a complex trend depending on the process conditions. Our model, based on the interaction between defects and the active/inactive impurities, explains this scenario. In particular, it predicts experimental P active profiles, thus demonstrating that the status of the defect system rules the activation phenomenon, where the coupling between dopant and defect clusters at the early irradiation stage plays a crucial role. (literal)

Prodotto di

• Sviluppo di metodologie avanzate per dispositivi elettronici micro e nanostrutturati (MD.P05.005.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)
• modelli e metodi numerici per la micro e nano elettronica (MD.P05.005.002) (Modulo)

Autore CNR

• ANTONINO LA MAGNA (Persona)
• VITTORIO PRIVITERA (Persona)
• MARKUS ITALIA (Persona)

Incoming links:

Autore CNR di

• ANTONINO LA MAGNA (Persona)
• VITTORIO PRIVITERA (Persona)
• MARKUS ITALIA (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• modelli e metodi numerici per la micro e nano elettronica (MD.P05.005.002) (Modulo)
• Sviluppo di metodologie avanzate per dispositivi elettronici micro e nanostrutturati (MD.P05.005.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)