Nanoscale characterization of electrical transport at metal/3C-SiC interfaces (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Nanoscale characterization of electrical transport at metal/3C-SiC interfaces (Articolo in rivista) (literal)

Anno

• 2011-01-01T00:00:00+01:00 (literal)

Alternative label

• Eriksson J, Roccaforte F, Reshanov S, Leone S, Giannazzo F, Lo Nigro R, Fiorenza P, Raineri V (2011)
  Nanoscale characterization of electrical transport at metal/3C-SiC interfaces
  in Nanoscale research letters (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Eriksson J, Roccaforte F, Reshanov S, Leone S, Giannazzo F, Lo Nigro R, Fiorenza P, Raineri V (literal)

Pagina inizio

• 120 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 6 (literal)

Rivista

• Nanoscale research letters (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. CNR IMM, I-95121 Catania, Italy 2. Univ Catania, Scuola Super, I-95123 Catania, Italy 3. Acreo AB, S-16440 Kista, Sweden 4. Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden (literal)

Titolo

• Nanoscale characterization of electrical transport at metal/3C-SiC interfaces (literal)

Abstract

• In this work, the transport properties of metal/3C-SiC interfaces were monitored employing a nanoscale characterization approach in combination with conventional electrical measurements. In particular, using conductive atomic force microscopy allowed demonstrating that the stacking fault is the most pervasive, electrically active extended defect at 3C-SiC(111) surfaces, and it can be electrically passivated by an ultraviolet irradiation treatment. For the Au/3C-SiC Schottky interface, a contact area dependence of the Schottky barrier height (Phi(B)) was found even after this passivation, indicating that there are still some electrically active defects at the interface. Improved electrical properties were observed in the case of the Pt/3C-SiC system. In this case, annealing at 500 degrees C resulted in a reduction of the leakage current and an increase of the Schottky barrier height (from 0.77 to 1.12 eV). A structural analysis of the reaction zone carried out by transmission electron microscopy [TEM] and X-ray diffraction showed that the improved electrical properties can be attributed to a consumption of the surface layer of SiC due to silicide (Pt(2)Si) formation. The degradation of Schottky characteristics at higher temperatures (up to 900 degrees C) could be ascribed to the out-diffusion and aggregation of carbon into clusters, observed by TEM analysis. (literal)

Prodotto di

• Materiali multifunzionali, e innovativi per componenti integrati (MD.P05.003.002) (Modulo)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)
• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• RAFFAELLA LO NIGRO (Unità di personale interno)
• FABRIZIO ROCCAFORTE (Persona)
• GUSTAV JENS PETER ERIKSSON (Unità di personale esterno)
• PATRICK FIORENZA (Persona)
• FILIPPO GIANNAZZO (Persona)
• VITO RAINERI (Persona)

Incoming links:

Autore CNR di

• FABRIZIO ROCCAFORTE (Persona)
• VITO RAINERI (Persona)
• FILIPPO GIANNAZZO (Persona)
• RAFFAELLA LO NIGRO (Unità di personale interno)
• PATRICK FIORENZA (Persona)
• GUSTAV JENS PETER ERIKSSON (Unità di personale esterno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)
• Materiali multifunzionali, e innovativi per componenti integrati (MD.P05.003.002) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Nanoscale research letters (Rivista)