Dynamics of laser-induced phase switching in GeTe films (Articolo in rivista)

Type
Label
  • Dynamics of laser-induced phase switching in GeTe films (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Alternative label
  • Gawelda W, Siegel J, Afonso C N, Plausinaitiene V, Abrutis A, Wiemer C (2011)
    Dynamics of laser-induced phase switching in GeTe films
    in Journal of applied physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Gawelda W, Siegel J, Afonso C N, Plausinaitiene V, Abrutis A, Wiemer C (literal)
Pagina inizio
  • 123102 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 109 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. CSIC, Inst Opt, Laser Proc Grp, E-28006 Madrid, Spain 2. Vilnius Univ, Dept Gen & Inorgan Chem, LT-03225 Vilnius, Lithuania 3. IMM CNR, Lab MDM, I-20864 Agrate Brianza, MB, Italy (literal)
Titolo
  • Dynamics of laser-induced phase switching in GeTe films (literal)
Abstract
  • Phase switching in GeTe thin films (grown using a modified metal organic chemical vapor deposition system) upon pulsed femtosecond and nanosecond laser irradiation has been studied. Two in situ methods, i.e., optical microscopy and real-time reflectivity measurements, have been used in order to compare the optical response before and after phase change and to follow the phase change dynamics with a time resolution close to 400 ps. The results show that cycling is possible under irradiation with both fs and ns pulses using single pulses for amorphization and multiple pulses for crystallization. The use of ns pulses favors the crystalline-to-amorphous phase transformation, with a characteristic transformation time of similar to 15 ns. The presence of the liquid phase was identified and temporally resolved, featuring a well-defined transient reflectivity state, in between those of the crystalline and amorphous phases. We have also studied the role of material configuration in the phase change dynamics and the mechanisms involved in the re-crystallization process. (literal)
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