http://www.cnr.it/ontology/cnr/individuo/prodotto/ID36806
Reset Instability in Pulsed-Operated Unipolar Resistive-Switching Random Access Memory Devices (Articolo in rivista)
- Type
- Label
- Reset Instability in Pulsed-Operated Unipolar Resistive-Switching Random Access Memory Devices (Articolo in rivista) (literal)
- Anno
- 2011-01-01T00:00:00+01:00 (literal)
- Alternative label
Nardi F, Cagli C, Spiga S, Ielmini D (2011)
Reset Instability in Pulsed-Operated Unipolar Resistive-Switching Random Access Memory Devices
in IEEE electron device letters (Print)
(literal)
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- Nardi F, Cagli C, Spiga S, Ielmini D (literal)
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- Rivista
- Note
- ISI Web of Science (WOS) (literal)
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- 1. Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy
2. Politecn Milan, Italian Univ Nanoelect Team, I-20133 Milan, Italy
3. IMM CNR, MDM, I-20864 Agrate Brianza, MB, Italy (literal)
- Titolo
- Reset Instability in Pulsed-Operated Unipolar Resistive-Switching Random Access Memory Devices (literal)
- Abstract
- Resistive-switching random access memory (RRAM) devices are attracting increasing interest as a potential candidate for high-density nonvolatile memory devices. One of the main issues toward RRAM feasibility is the reduction of the reset current I(reset) necessary to restore the high-resistance state in the device. I(reset) can be reduced by controlling the size of the conductive filament responsible for the low-resistance state; however, available data only focus on direct-current reset analysis. This letter addresses I(reset) reduction under pulsed operation. Unstable reset behaviors, including set-reset and set instability, are shown to occur during relatively fast pulses and starting from set states with relatively large resistance values. These instability effects limit I(reset) reduction, posing a potential issue of minimum reset current achievable in RRAM devices. (literal)
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