Reset Instability in Pulsed-Operated Unipolar Resistive-Switching Random Access Memory Devices (Articolo in rivista)

Type
Label
  • Reset Instability in Pulsed-Operated Unipolar Resistive-Switching Random Access Memory Devices (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Alternative label
  • Nardi F, Cagli C, Spiga S, Ielmini D (2011)
    Reset Instability in Pulsed-Operated Unipolar Resistive-Switching Random Access Memory Devices
    in IEEE electron device letters (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Nardi F, Cagli C, Spiga S, Ielmini D (literal)
Pagina inizio
  • 719 (literal)
Pagina fine
  • 721 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 32 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy 2. Politecn Milan, Italian Univ Nanoelect Team, I-20133 Milan, Italy 3. IMM CNR, MDM, I-20864 Agrate Brianza, MB, Italy (literal)
Titolo
  • Reset Instability in Pulsed-Operated Unipolar Resistive-Switching Random Access Memory Devices (literal)
Abstract
  • Resistive-switching random access memory (RRAM) devices are attracting increasing interest as a potential candidate for high-density nonvolatile memory devices. One of the main issues toward RRAM feasibility is the reduction of the reset current I(reset) necessary to restore the high-resistance state in the device. I(reset) can be reduced by controlling the size of the conductive filament responsible for the low-resistance state; however, available data only focus on direct-current reset analysis. This letter addresses I(reset) reduction under pulsed operation. Unstable reset behaviors, including set-reset and set instability, are shown to occur during relatively fast pulses and starting from set states with relatively large resistance values. These instability effects limit I(reset) reduction, posing a potential issue of minimum reset current achievable in RRAM devices. (literal)
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