Electrical conduction and optical properties of doped silicon-on-insulator photonic crystals (Articolo in rivista)

Type
Label
  • Electrical conduction and optical properties of doped silicon-on-insulator photonic crystals (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.3580613 (literal)
Alternative label
  • Cardile P, Franzo G, Lo Savio R, Galli M, Krauss TF, Priolo F, Faolain Liam O' (2011)
    Electrical conduction and optical properties of doped silicon-on-insulator photonic crystals
    in Applied physics letters; American Institute of Physics, Melville [NY] (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Cardile P, Franzo G, Lo Savio R, Galli M, Krauss TF, Priolo F, Faolain Liam O' (literal)
Pagina inizio
  • 203506 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 98 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. Univ St Andrews, Sch Phys & Astron, SUPA, St Andrews KY16 9SS, Fife, Scotland 2. Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy 3. Scuola Super Catania, I-95123 Catania, Italy 4. CNR IMM MATIS, I-95123 Catania, Italy 5. Univ Pavia, Dipartimento Fis A Volta, I-27100 Pavia, Italy (literal)
Titolo
  • Electrical conduction and optical properties of doped silicon-on-insulator photonic crystals (literal)
Abstract
  • We investigate the electrical properties of silicon-on-insulator (SOI) photonic crystals as a function of both doping level and air filling factor. The resistance trends can be clearly explained by the presence of a depletion region around the sidewalls of the holes that is caused by band pinning at the surface. To understand the trade-off between the carrier transport and the optical losses due to free electrons in the doped SOI, we also measured the resonant modes of L3 photonic crystal nanocavities and found that surprisingly high doping levels, up to 10(18)/cm(3), are acceptable for practical devices with Q factors as high as 4 x 10(4). (literal)
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