http://www.cnr.it/ontology/cnr/individuo/prodotto/ID36791
Heterojunction solar cells on multicrystalline silicon: surface treatments (Articolo in rivista)
- Type
- Label
- Heterojunction solar cells on multicrystalline silicon: surface treatments (Articolo in rivista) (literal)
- Anno
- 2011-01-01T00:00:00+01:00 (literal)
- Alternative label
Tucci M, Serenelli L, De Iuliis S, Izzi M, Summonte C, Canino M, Allegrezza M, Rosa M, De Cesare G, Caputo D (2011)
Heterojunction solar cells on multicrystalline silicon: surface treatments
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Tucci M, Serenelli L, De Iuliis S, Izzi M, Summonte C, Canino M, Allegrezza M, Rosa M, De Cesare G, Caputo D (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Note
- ISI Web of Science (WOS) (literal)
- Titolo
- Heterojunction solar cells on multicrystalline silicon: surface treatments (literal)
- Abstract
- In this work we present the results we obtained by processing
1 ©cm p and n-type, multi-crystalline silicon wafers
when a double hydrogenated amorphous /crystalline
silicon heterojunction is applied to sandwich the substrate,
at the sunward surface to form the emitter and at the rear
side to act as back surface field. We have investigated the
role of the multi-crystalline silicon surface conditioning,
on the base of illuminated and dark current-voltage characteristic,
quantum efficiency measurements, and overall
photovoltaic solar cell performance. In particular, a comparison
between an acidic isotexturing and a chemical
polishing treatment is presented and discussed in detail.
We have found that the morphology of the multicrystalline
silicon surface plays a tough role in the a-Si:H
properties when used as surface passivating layer. The
commercial acidic surface treatment, commonly used in
diffused junction mc-Si solar cell fabrication, requires a
level of passivation which is not easily achievable using
the very thin a-Si:H film, needed in heterojunction technology.
The deposition of a uniform thickness over a
whole textured silicon surface of a thin amorphous layers
still requires further investigation and improvement.
Nevertheless the high Voc obtained on p-type doped mc-
Si (625 mV) remarks the effectiveness of a-Si:H/mc-Si
technology in achieving high photovoltaic efficiency using
low thermal budget manufacturing process. (literal)
- Prodotto di
- Autore CNR
- Insieme di parole chiave
Incoming links:
- Prodotto
- Autore CNR di
- Insieme di parole chiave di