Defect Influence on Heteroepitaxial 3C-SiC Young's Modulus (Articolo in rivista)

Type
Label
  • Defect Influence on Heteroepitaxial 3C-SiC Young's Modulus (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Alternative label
  • Anzalone R, Camarda M, Canino A, Piluso N, La Via F, D'Arrigo G (2011)
    Defect Influence on Heteroepitaxial 3C-SiC Young's Modulus
    in Electrochemical and solid-state letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Anzalone R, Camarda M, Canino A, Piluso N, La Via F, D'Arrigo G (literal)
Pagina inizio
  • H161 (literal)
Pagina fine
  • H162 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 14 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • IMM-Catania (literal)
Titolo
  • Defect Influence on Heteroepitaxial 3C-SiC Young's Modulus (literal)
Abstract
  • Heteroepitaxial cubic silicon carbide (3C-SiC) is an extremely promising material for micro-and nano-electromechanical systems due to its large Young's modulus. Unfortunately, the heteroepitaxy of 3C-SiC on Si substrate is affected by the high mismatch in the lattice parameters and the thermal expansion coefficients between the two dissimilar materials that generate a high number of defects in the material. In this work, through the measurement of natural resonant frequencies and Raman shift analysis, a strong relationship between the mechanical proprieties of the material (Young's modulus) and the film crystal quality (defect density) was observed. (literal)
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