http://www.cnr.it/ontology/cnr/individuo/prodotto/ID36781
Island-to-Percolation Transition During the Room-Temperature Growth of Sputtered Nanoscale Pd Films on Hexagonal SiC (Articolo in rivista)
- Type
- Label
- Island-to-Percolation Transition During the Room-Temperature Growth of Sputtered Nanoscale Pd Films on Hexagonal SiC (Articolo in rivista) (literal)
- Anno
- 2010-01-01T00:00:00+01:00 (literal)
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- Ruffino F, Grimaldi MG (literal)
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- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Dipartimento di Fisica e Astronomia, CNR-IMM MATIS, Università di Catania, via S. Sofia 64, I-95123 Catania, Italy (literal)
- Titolo
- Island-to-Percolation Transition During the Room-Temperature Growth of Sputtered Nanoscale Pd Films on Hexagonal SiC (literal)
- Abstract
- We have studied the growth of room-temperature sputtered Pd films on 6H-SiC by using the atomic force microscopy technique. In particular, we analyzed the Pd film surface morphology as a function of the film thickness from 3 to 72 nm observing that the Pd grows initially (thickness 212 nm) as three-dimensional (3D) islands. Then (thickness 1236 nm) the Pd film morphology evolves from compact 3D islands to partially coalesced wormlike structures, followed (3660 nm) by a percolation morphology and finally to a continuous and rough film (at 72 nm). The application of the interrupted coalescence model allowed us to evaluate the critical mean islands diameter Rc = 6.6 nm for the partial coalescence process while the application of the kinetic freezing model allowed us to evaluate the room-temperature Pd surface diffusion coefficient Ds = 1.4x10-17 m2/s on 6H-SiC. Finally, the application of the Vincents model allowed us to evaluate the critical Pd coverage Pc=68% for the percolation transition. (literal)
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